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专利名称：WAFER WITH CRYSTALLINE SILICON AND
TRAP RICH POLYSILICON LAYER
发明人：Anthony K. STAMPER,Steven M. SHANK,John
J. PEKARIK,Vibhor JAIN,John J. ELLIS-有关兔子的故事>怎么样设置路由器
MONAGHAN
申请号：US16743584
鸡的做法大全申请日：20200115
公开号：US20210217850A1
公开日：
20210715拔河规则
专利内容由知识产权出版社提供
专利附图：
摘要：The prent disclosure relates to miconductor structures and, more
particularly, to a wafer with crystalline silicon and trap rich polysilicon layer and methods of manufacture. The structure includes: miconductor-on-insulator (SOI) wafer compod of a lower crystalline miconductor layer, a polysilicon layer over the lower crystalline miconductor layer, an upper crystalline miconductor layer over the polysilicon layer, a buried insulator layer over the upper crystalline miconductor layer, and a top crystalline miconductor layer over the buried insulator layer.
申请人：GLOBALFOUNDRIES U.S. INC.
would是情态动词吗飞越梦想地址：Santa Clara CA US
国籍：US
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