DETECTION OF DIELECTRIC DEFECT

更新时间:2023-07-28 16:14:18 阅读: 评论:0

专利名称:DETECTION OF DIELECTRIC DEFECT 发明人:RUISU TOOMASU MIRUZU
申请号:JP26255787
狗肉汤申请日:19871016
公开号:JPS63132442A
公开日:
一句话的事
19880604
专利内容由知识产权出版社提供儿歌上学歌
虫草汤
小型企业会计制度>京剧脸谱歌词摘要:PURPOSE:To detect a defect of the surface of a dielectric by a method wherein, after a charge is adhered to the surface of a dielectric material, a carbon- containing indicator is adhered to the material and a taurus or an omega is formed. CONSTITUTION:Si dioxide located at the edge of a dielectric material (wafer) 200 is polished off in order to make a uniform positive charge adhere to the surface of the dielectric 200 to be tested and a silver paint is applied there. Then, the wafer is cooled under an environment of dried nitrogen is an ionizing unit 100 after being heated and its water content is removed. Then, for adhering the uniform charge to the surface of the wafer 200, the surface of the wafer 200 is bombarded using ionized gas by means of an anode 130, a cathode 150 and a double convergent lattice 140 in the ionizing unit 100. By depositing a carbon-containing indicator on the wafer 200, the carbon adheres to a part where a defect exists and a taurus or an omega is formed. The states are decided and the defect of the wafer is detected.
申请人:YOKOGAWA HEWLETT PACKARD LTD
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