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Slow-Wave Characterization of Metal-Semiconductor Structures by the Green\\"s Function
Method
期刊名称： Journal of Electromagnetic Waves & Applications
作者： Ahmadpanah, M.,Brito, F.,Benghalia, A.,Bajon, D.,Baudrand, H.
wav年份： 1991年
期号： 第4-5期
关键词： 1,4-Disila[6]radialenes;6] Radialenes;Chair-twist inversion, kinetic
measurements of;Twist conformers, paration of enantiomers of
摘要：Several approaches, using different forms of Green's functions, are prented for the two-dimensional analysis of slow-wave structures which are ud in monolithic microwave integrated circuits. It is shown that the methods lead to an accurate determination of the depletion layer profile i
n the metal-
miconductor structure, allowing an adequate modelling of the corresponding
cross-ction. The most significant characteristics of a quasi-TEM slow-wave
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propagation, namely the slowing factor and attenuation constant, are calculated江南行
泥狗子and in some cas the obtained theoretical results are shown to be in good
agreement with available experimental data. It is also demonstrated that the
methods allow to study single- and dual-gate travelling-wave field effect过桥米线怎么吃
青龙探爪transistors by means of a simple change in the boundary conditions and 我的老师作文100字
内容由中国教育图书进出口有限公司引进
