专利名称：Chemical vapor deposition growth of single-wall carbon nanotubes
发明人：Leonid Grigorian,Louis Hornyak,Anne
Dillon,Michael J. Heben
春天组词申请号：US09825870特色菜谱大全做法
鲜花和荆棘
强制卸载软件申请日：20010405四渡赤水路线图
重启电脑命令公开号：US20020172767A1
公开日：
世界问候日
20021121
专利内容由知识产权出版社提供
摘要：The invention relates to a chemical vapor deposition (“CVD”) process for the growth of single-wall carbon nanotube (“SWNT”). According to the invention, methane gas is decompod in the prence of a supported iron-containing catalyst to grow SWNT material within a growth temperature range from about 670° C. to about 800° C. The process provides higher yields of SWNT material and reduces the formation of amorphous carbon. Thus, the SWNT material produced according to the invention will minimize problems associated with purification steps, such as breakage or damage to the SWNT material. The invention provides for the manufacture of SWNT material at lower temperatures, which not only results in lower equipment and processing costs, but also provides compatibility with substrates that cannot be ud at higher temperatures. The invention may be ud to provide an inexpensive process for the mass production of SWNT material.
预则立
申请人：GRIGORIAN LEONID,HORNYAK LOUIS,DILLON ANNE,HEBEN MICHAEL J.
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