专利名称：THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF 发明人：ZHANG, Kun
申请号：EP18937847.4
申请日：20181024
公开号：EP3830871A1
灸读音纯粹足球公开日：
深圳周边景点20210609
体育运动会
专利内容由知识产权出版社提供
摘要：A method for forming a 3D memory device is disclod. The method includes: forming an alternating dielectric stack on a substrate; forming a temporary top lective gate cut in an upper portion of the alternating dielectric stack and extending along a lateral direction; forming a plurality of channel holes penetrating the alternating dielectric stack; removing the temporary top lective gate cut; and forming, simultaneously, a plurality of channel structures in the plurality of channel holes and a top lective gate cut structure.
申请人：Yangtze Memory Technologies Co., Ltd.
地址：No.88 Weilai 3rd Road, East Lake High-tech Development Zone Wuhan, Hubei 430223 CN
我与地坛简介八一建军节的来历国籍：CN方框打钩
代理机构：Lippert Stachow Patentanwälte Rechtsanwälte
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