专利名称：SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF
发明人：WAKIMOTO EIJI
申请号：JP12828087
申请日：19870527
公开号：JPS63293978A
公开日：
娃哈哈老总>挂烫机怎么加水
和字怎么组词
早上喝牛奶有什么好处
画小狗19881130
人物海报
专利内容由知识产权出版社提供
咏春教学
摘要：PURPOSE:To miniaturize a collector electrode, to allow for the space of elements and to facilitate a layout by leading out an electrode from an n<+> diffusion layer as an emitter by utilizing a hole for diffusing the emitter as it is and leading out an electrode from the n<+> diffusion layer for a collector by making the electrode smaller than a hole for diffusing the collector. CONSTITUTION:A p-type diffusion layer 8 formed to the surface of a ction (the upper ction of a step) to which a groove in an island region is not shaped is ud as a ba for an n-p-n transistor, and an n<+> diffusion layer 9 as an emitter is formed to the partial surface of the ba 8. An n<+> diffusion layer 11 for a collector is shaped to the lower ction of the step of the island region. A hole in an SiO2 film bored for forming the emitter n<+> diffusion layer 9 is covered completely with an emitter Al electrode 10e connected to the emitter n<+> diffusion layer 9. A collector Al electrode 10c is brought into contact in the narrow ction of the surface of the collector n<+> diffusion layer 11. The collector leading-out electrode loc can be connected by a small contact ction to the n<+> diffusion layer 11, thus forming an electrode pattern in small size the same as ba-emitter electrodes.
学疏才浅
申请人：HITACHI LTD
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