Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.7628 Thorndike Road
Greensboro, NC 27409, USA Tel (336) 664 1233Fax (336) 664
Optimum Technology Matching® Applied
Si BJT GaAs MESFET GaAs HBT
Si Bi-CMOS SiGe HBT
Si CMOS InGaP/HBT
GaN HEMT
SiGe Bi-CMOS
RF OUT
GENERAL PURPOSE AMPLIFIER
•Broadband, Low Noi Gain Blocks •IF or RF Buffer Amplifiers •Driver Stage for Power Amplifiers •Final P A for Low Power Applications •High Reliability Applications •Broadband Test Equipment
The RF2048 is a general purpo, low cost RF amplifier IC. The device is manufactured on an advanced Gallium Arnide Heterojunction Bipolar T ransistor (HBT) pro-cess, and has been designed for u as an easily-cas-cadable 50Ω gain block. Applications include IF and RF amplification in wireless voice and data communication products operating in frequency bands up to 8000MHz.The device is lf-contained with 50Ω input and output impedances and requires only two external DC biasing elements to operate as specified. With a goal of enhanced reliability, the extremely small Micro-X ceramic package offers significantly lower thermal resistance than similar size plastic packages.
•DC to 8000MHz Operation
•Internally matched Input and Output •12dB Small Signal Gain
•+26dBm Output IP3•+12dBm Output Power •Single Positive Power Supply
RF2048
General Purpo Amplifier
RF2048 PCBA Fully Asmbled Evaluation Board
45°
NOTES:
1. Shaded lead is pin 1.
2. Darkened areas are metallization.
Package Style: Micro-X Ceramic
!
Absolute Maximum Ratings
Parameter
Rating
Unit
Input RF Power
+13dBm Operating Ambient T emperature -40 to +85°C Storage Temperature
-
60 to +150
°C
Parameter
Specification Unit
Condition
Min.Typ.Max.
Overall
T=25°C, V D =3.6V, I CC =40mA
Frequency Range DC to 8000
MHz Gain
12.2dB Freq=100MHz 12.1dB Freq=1000MHz 10
11.8dB Freq=2000MHz 11.5dB
Freq=3000MHz 11.3Freq=4000MHz 11.0Freq=6000MHz 10.2Freq=8000MHz
Gain Flatness ±0.2dB 100MHz to 2000MHz Noi Figure 5.3dB
Freq=2000MHz
Input VSWR 1.6:1In a 50Ω system, DC to 3000MHz
1.8:1In a 50Ω system, 3000MHz to 8000MHz Output VSWR 1.5:1In a 50Ω system, DC to 3000MHz
1.9:1In a 50Ω system, 3000MHz to 8000MHz Output IP 3+26dBm Freq=2000MHz±100kHz, P TONE =-5dBm Output P 1dB
+11.7dBm Freq=2000MHz Rever Isolation
16.6
dB Freq=2000MHz
Thermal
I CC =40mA, P DISS =137mW (See Note 1.)
Theta JC
291°C/W Maximum Measured Junction
Temperature at DC Bias Con-ditions农业企业
124
°C
臀中肌
Mean Time To Failure (MTTF)
小时候玩的游戏有哪些
123,000
years T AMB =+85°C
Power Supply
With 22Ω bias resistor, T=+25°C Operating Device Voltage
3.0 3.6
4.0V
At pin 3 with I CC =40mA
3.9
4.4
4.9At evaluation board connector, I CC =40mA Operating Current 40
mA See Note 2.
NOTES:
Note 1: The RF2048 must be operated at or below 40mA in order to achieve the thermal performance stated above. Operating at 40mA
will ensure the best possible combination of reliability and electrical performance.
Note 2: Becau of process variations from part to part, the current resulting from a fixed bias voltage will vary. As a result, caution
should be ud in designing fixed voltage bias circuits to ensure the worst ca bias current does not exceed 40mA over all intended operating conditions.
ESD nsitive device.
RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices rerves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the u of the described product(s).
Application Schematic
RF OUT
Evaluation Board Schematic (Download Bill of Materials from )
Evaluation Board Layout Board Size 1.195" x 1.000"
Typical Current versus Voltage
0.00
10.00
20.00
30.00
40.00
50.00
60.00
3.7
3.9
4.1
4.3
4.5
4.7
4.9
田珍
V CC (V)
I C C (m A )
石斛怎样选择才是好的
Typical I CC versus V CC
0.00
10.00
20.00
30.00
40.00
50.00
60.00
3.20
3.30
ktv排行榜前100首3.40
3.50
3.60
3.70
坏道3.80
3.90
V PIN (V)I C C (m A
)
Power Dissipated versus Voltage at Pin 3
0.04
0.06
0.08
0.10
0.12
0.14
0.16
0.18
3.20
3.25
3.30
3.35
3.40
3.45
3.50
V PIN (V)
P o w e r D i s s i p a t e d (W )
T MAX versus P
DISS 100.000
110.000
120.000
130.000
140.000
150.000
0.095
0.105
0.115
0.125
0.135
0.145
0.155
0.165
0.175
P DISS (W)
T M A X (°C )
MTTF versus Junction Temperature (Valid for I CC <40mA)
10.0100.0
1000.0
10000.0
100000.0
1000000.0
10000000.0
100.0
125.0
150.0
175.0
200.0
Junction Temperature (°C)
酒后驾车处罚M T T F (Y e a r s )
