LMX2306/LMX2316/LMX2326
PLLatinum ™Low Power Frequency Synthesizer for RF Personal Communications LMX2306550MHz LMX2316 1.2GHz LMX2326 2.8GHz
General Description
The LMX2306/16/26are monolithic,integrated frequency synthesizers with prescalers that are designed to be ud to generate a very stable low noi signal for controlling the local oscillator of an RF transceiver.They are fabricated using National’s ABiC V silicon BiCMOS 0.5µprocess.
The LMX2306contains a 8/9dual modulus prescaler while the LMX2316and the LMX2326have a 32/33dual modulus prescaler.The LMX2306/16/26employ a digital pha locked loop technique.When combined with a high quality reference oscillator and loop filter,the LMX2306/16/26pro-vide the feedback tuning voltage for a voltage controlled oscillator to generate a low pha noi local oscillator sig-nal.Serial data is transferred into the LMX2306/16/26via a three wire interface (Data,Enable,Clock).Supply voltage can range from 2.3V to 5.5V.The LMX2306/16/26feature ultra low current consumption;LMX2306-1.7mA at 3V,LMX2316-2.5mA at 3V,and LMX2326-4.7mA at 3V.The LMX2306/16/26synthesizers are available in a 16-pin TSSOP surface mount plastic package.
Features
n 2.3V to 5.5V operation
n Ultra low current consumption
n 2.5V V CC JEDEC standard compatible
n Programmable or logical power down mode:—I CC =1µA typical at 3V n
Dual modulus prescaler:—LMX23068/9—LMX2316/2632/33
n Selectable charge pump TRI-STATE ®mode
n Selectable FastLock ™mode with timeout counter n MICROWIRE ™Interface n诚挚的感谢
Digital Lock Detect
Applications
n Portable wireless communications (PCS/PCN,cordless)n Wireless Local Area Networks (WLANs)n Cable TV tuners (CATV)n Pagers
n
Other wireless communication systems
Functional Block Diagram
10012701
TRI-STATE ®is a registered trademark of National Semiconductor Corporation.
FastLock ™,PLLatinum ™and MICROWIRE ™are trademarks of National Semiconductor Corporation.钧窑瓷器
March 2004
LMX2306/LMX2316/LMX2326PLLatinum Low Power Frequency Synthesizer for RF Personal Communications
©2004National Semiconductor Corporation
Connection Diagrams
LMX2306/16/26
LMX2306/16/26
10012702
16-Lead (0.173”Wide)Thin Shrink Small Outline
Package(TM)
Order Number LMX2306TM,LMX2306TMX,LMX2316TM,
LMX2316TMX,
延音记号LMX2326TM or LMX2326TMX See NS Package Number MTC16
10012719
16-pin Chip Scale Package
Order Number LMX2306SLBX,LMX2316SLBX or
LM2326SLBX
See NS Package Number SLB16A
Pin Descriptions
16-Pin TSSOP 16-Pin CSP
Pin Name I/O
Description
115FL o O FastLock Output.For connection of parallel resistor to the loop filter.(See Section 1.3.4FASTLOCK
MODES description.)216CP o O Charge Pump Output.For connection to a loop filter for driving the input of an external VCO.
31GND Charge Pump Ground.42GND Analog Ground.李坑
5
3
f IN
I RF Prescaler Complementary Input.A bypass capacitor should be placed as clo as possible to this pin and be connected directly to the ground plane.The complementary input can be left unbypasd,with some degradation in RF nsitivity.64f IN I
RF Prescaler Input.Small signal input from the VCO.
7
5
V CC1
Analog Power Supply Voltage Input.Input may range from 2.3V to 5.5V.Bypass capacitors should be placed as clo as possible to this pin and be connected directly to the ground plane.V CC1must equal V CC2.86OSC IN I
Oscillator Input.This input is a CMOS input with a threshold of approximately V CC /2and an equivalent 100k input resistance.The oscillator input is driven from a reference oscillator.97GND Digital Ground.10
8
CE
I
Chip Enable.A LOW on CE powers down the device and will TRI-STATE the charge pump output.Taking CE HIGH will power up the device depending on the status of the power down bit F2.(See Section 1.3.1POWERDOWN OPERATION and Section 2.1DEVICE PROGRAMMING AFTER FIRST APPLYING V CC .)
119Clock I High Impedance CMOS Clock Input.Data for the various counters is clocked in on the rising edge into the 21-bit shift register.
1210Data I Binary Serial Data Input.Data entered MSB first.The last two bits are the control bits.High impedance CMOS input.
1311LE I
Load Enable CMOS Input.When LE goes HIGH,data stored in the shift registers is loaded into one of the 3appropriate latches (control bit dependent).
1412Fo/LD O Multiplexed Output of the RF Programmable or Reference Dividers and Lock Detect.CMOS output.
(See Table 4.)
15
13
V CC2
Digital Power Supply Voltage Input.Input may range from 2.3V to 5.5V.Bypass capacitors should be placed as clo as possible to this pin and be connected directly to the ground plane.V CC1must equal V CC2.
1614
V P
Power Supply for Charge Pump.Must be ≥V CC .
L M X 2306/L M X 2316/L M X 2326
2
Absolute Maximum Ratings(Notes1,2) Power Supply Voltage
V CC1−0.3V to+6.5V V CC2−0.3V to+6.5V V p−0.3V to+6.5V Voltage on Any Pin
with GND=0V(V I)−0.3V to V CC+
0.3V Storage Temperature Range(T S)−65˚C to+150˚C Lead Temperature(T L)
(solder,4c.)+260˚C Recommended Operating Conditions
Min Max Units Power Supply Voltage
V CC1 2.3 5.5V
V CC2V CC1V CC1V
V p V CC 5.5V Operating Temperature(T A)−40+85˚C
Note1:Absolute Maximum Ratings indicate limits beyond which damage to the device may occur.Recommended operating conditions indicate condi-tions for which the device is intended to be functional,but do not guarantee specific performance limits.For guaranteed specifications and test condi-tions,e the Electrical Characteristics.The guaranteed specifications apply only for the test conditions listed.
Note2:This device is a high performance RF integrated circuit with an ESD rating<2kV and is ESD nsitive.Handling and asmbly of this device should only be done at ESD protected work stations.
Electrical Characteristics
V CC=3.0V,V p=3.0V;−40˚C<T A<85˚C except as specified
Symbol Parameter Conditions Values Units
Min Typ Max
I CC Power Supply Current LMX2306V CC=2.3V to5.5V 1.7 3.5mA
LMX2316V CC=2.3V to5.5V 2.5 5.0mA
LMX2326V CC=2.3V to5.5V 4.77.0mA I CC-PWDN Powerdown Current V CC=3.0V1µA
f IN RF Input Operating
Frequency LMX2306V CC=2.3V to5.5V25550MHz LMX2316V CC=2.3V to5.5V0.1 1.2GHz LMX2326V CC=2.3V to5.5V0.1 2.1GHz V CC=3.0V to5.5V0.1 2.8GHz
f osc Maximum Oscillator Frequency V CC=2.3V to5.5V540MHz
V CC=2.7V to5.5V5100MHz
fφMaximum Pha Detector Frequency10MHz
Pf IN RF Input Sensitivity V CC=2.3V to<3.0V−15+0dBm
V CC=3.0V to5.5V−10+0dBm
OSC IN Oscillator Sensitivity−5dBm
V IH High-Level Input Voltage(Note4)0.8x V CC V
V IL Low-Level Input Voltage(Note4)0.2x
文情V CC
V
I IH High-Level Input Current V IH=V CC=5.5V(Note4)−1.0 1.0µA
I IL Low-Level Input Current V IL=0V,V CC=5.5V
(Note4)
−1.0 1.0µA
I IH Oscillator Input Current V IH=V CC=5.5V100µA
I IL Oscillator Input Current V IL=0V,V CC=5.5V−100µA
ICP o-source Charge Pump Output Current V Do=V p/2,ICP o=LOW
(Note3)
−250µA
ICP o-sink V Do=V p/2,ICP o=LOW
(Note3)
250µA
ICP o-source V Do=V p/2,ICP o=HIGH
(Note3)
−1.0mA
ICP o-sink V CPo=V p/2,ICP o=HIGH泰山实验中学
(Note3)
1.0mA
ICP o-Tri Charge Pump TRI-STATE Current0.5≤V CPo≤V p−0.5−2.5 2.5nA
−40˚C<T A<85˚C
LMX2306/LMX2316/LMX2326
3
Electrical Characteristics
(Continued)
V CC =3.0V,V p =3.0V;−40˚C <T A <85˚C except as specified
Symbol Parameter
Conditions
Values Units
Min
Typ Max
ICP o-sink vs CP Sink vs Source Mismatch
V CPo =V p /25
%ICP o-source T A =25˚C
ICP o vs V Do CP Current vs Voltage 0.5≤V CPo ≤V p −0.55
%
T A =25˚C ICP o vs T CP Current vs Temperature V CPo =V p /25
%
−40˚C <T A <85˚C V OH High-Level Output Voltage I OH =−500µA V CC −0.4
V V OL Low-Level Output Voltage I OL =500µA
0.4
V t CS Data to Clock Set Up Time See Data Input Timing 50ns t CH Data to Clock Hold Time See Da
ta Input Timing 10ns t CWH Clock Pul Width High See Data Input Timing 50ns t CWL Clock Pul Width Low
See Data Input Timing 50ns t ES Clock to Load Enable Set Up Time See Data Input Timing 50ns t EW
Load Enable Pul Width
See Data Input Timing
50ns
Note 3:See PROGRAMMABLE MODES for ICP o description Note 4:Except f IN and OSC IN .
L M X 2306/L M X 2316/L M X 2326
4
Charge Pump Current Specification Definitions
交通安全倡议书
10012723
I1=Charge Pump Sink Current at VCP o =V P −∆V I2=Charge Pump Sink Current at VCP o =V P /2I3=Charge Pump Sink Current at VCP o =∆V
I4=Charge Pump Source Current at VCP o =V P −∆V I5=Charge Pump Source Current at VCP o =V P /2I6=Charge Pump Source Current at VCP o =∆V
∆V =Voltage offt from the positive and negative rails.Dependent on the VCO tuning range relative to V CC and GND.Typical values are between 0.5V and 1.0V.
Charge Pump Output Current Magnitude Variation Vs Charge Pump Output Voltage
10012720
Charge Pump Output Current Sink Vs Charge Pump Output Current Source Mismatch
10012721
Charge Pump Output Current Magnitude Variation Vs Temperature
10012722
LMX2306/LMX2316/LMX2326
吉林多少人口
5
