CIS STRUCTURE WITH COMPLEMENTARY METAL GRID AND DE

更新时间:2023-07-16 22:08:28 阅读: 评论:0

糖果的味道专利名称:CIS STRUCTURE WITH COMPLEMENTARY METAL GRID AND DEEP TRENCH ISOLATION
AND METHOD FOR MANUFACTURING THE
SAME
妙手回春什么意思
发明人:Bo-Tsung TSAI,Chun-Hao CHOU,Tsung-Han TSAI,Kuo-Cheng LEE,Yung-Lung HSU,Yun-
Wei CHENG
申请号:US15721201
崭新的生活
申请日:20170929
公开号:US20180026061A1
公开日:
20180125卡西诺战役
开心的歌专利内容由知识产权出版社提供专利附图:
小孩智力测试摘要:A CMOS image nsor structure includes a substrate and pixel portions. Each pixel portion includes interction areas, the border areas each of which is located between any two adjacent ones of the interction areas, and a central area surrounded by the interction areas and the border areas. Each pixel portion includes a device layer, an anti-reflective coating layer, discrete reflective structures, discrete metal blocking structures, a passivation layer and a color filter. The device layer is dispod on the substrate. Trenches are formed in the device layer and the substrate corresponding to the border areas respectively. The anti-reflective coating layer conformally covers the device layer, the substrate and the trenches. The reflective structures are dispod in the trenches. The metal blocking structures overly the anti-reflective coating layer in the interction areas. The passivation layer conformally covers the metal blocking structures. The color filter is dispod on the passivation layer.
红袜队申请人:TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
地址:Hsinchu TW
红烧黄鳝国籍:TW
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