Super junction MOSFET technologies
and market
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Publication date : June 2011
Super junction MOSFET technologies and market
SJ MOSFET market will double to reach $890M in 2016
Infineon and ST Micro are sharing 90% of the market, leaving Vishay, Fairchild, Toshiba and all the new comers struggling for the
remaining pieces (still $50M…). However, the market is being
attacked by new comers: Fairchild & Toshiba in 2004, then Vishay in 2010, followed by Renesas, Fuji Electric, Alpha Omega Semiconductor, Hua-hong NEC and probably others very soon. This picture is to change as market size will nearly double within the next 5 years.
First CoolMOS® was relead back in 1998 by Infineon. It broke what had been the “silicon limit” for key device performance parameters (RDSON per area), and competitors took time to develop and make their own solution commercially available, such as ST Micro who relead
it s MDmesh® in 2000. While waiting for the performance improvements promid for a long time by compound miconductor devices, system manufacturers keep pushing for improvements in Silicon devices at the lowest cost possible. SJ MOS is one of the solutions propod today.
Shortage in 2010 opens doors for smaller players:
The SJ MOS market will experience a CAGR of approximately 13% for the next 5 years. However, in 2009 manufacturers slowed production becau of the economic downturn and then 2010 was a year of shortage. SJ MOS production process is so proprietary and specific that it is difficult to outsource to foundries. This reduces the capability to meet the demand. Re-launching biggest player’s production left more room for smaller players; that gives them an opportunity in 2011 to take market shares.
New entrants, new devices, differing strategies and emerging applications:
Applications are also expanding. New inverter topologies are using SJ MOS in systems up to 10kW. The expected added value is cost, space and efficiency. There will be an impact on SJ MOS market, coming from this new structure. The new topologies will be the driver of SJ MOS power modules and we expect to e more and more SJ MOS in inverters. They will also take market share to IGBT in 600V-1200V range. They will be preferred for high frequency needs.
SJ MOS technology is also increasing in voltage breakdown. ST Micro is releasing 1200V MDmesh® and now targeting 1700V.On the other side, 900V CoolMOS® from Infineon is looking for a market at the moment. Players have very different strategies, targeting very different markets. Some envision that SJ MOS will replace IGBT’s in lected 1200V applications; others prefer to focus on cost to make their solution replace Planar MOSFETs. Among the SJ MOS players, a large portion also develops solutions for the next generation of power miconductors, GaN and SiC. Super junction will be the Silicon technology that will make the transition to compound materials. It will make Silicon last more than expected.
如何做鱼汤
Multiple epitaxy vs. deep trench: the two competing technologies?
SJ MOS technology is also balancing between multiple epitaxy, the historical structure developed by
Infineon, and deep trench, the newest structure. Cost will be the main issue to tackle, to make one technology available and ud in more and more solutions. Some expect that deep trench will be the best. It allows fast processing through deep reactive ion etching, with higher yield and smaller dies. There are still difficulties and tting up the process is prohibitive. On its side, multiple epitaxy technology stays expensive, with its repeated lithography steps, but process is now well known. Some manufacturers can reach high yields with older devices (+85%). Yield is difficult to improve thus players are looking forward to smaller dies.
Integrators will remain technology agnostic. The market is and will be cost-driven. Becau of the development costs involved and the need of return on investment, we envision the two structures are going to live jointly for a few years…
Key features of the report:
Market trends (ASP, Units, M$) and figures with detailed breakdown: By players
By application
木瓜泡酒Multiple epitaxies and deep trench technology revealed and explained Description and positioning of the technology in terms of
applications
Profiling of the players and analysis of their strategy
Profiling of the new entrants and analysis of their status
Analysis of the trends and evolutions in terms of technology and applications
Who should buy this report?
Power miconductor manufacturers:
Identify today’s players, technologies and strategy
Benchmark SJ MOS technology versus of other available power switches Get the exact picture of SJ MOS market to take the good decisions.
SJ MOS manufacturers:
Get the market metrics required for your strategy
Identify your opportunities in emerging applications
Benchmark your competitor’s technology and strategy
Equipment manufacturers:
Identify new business opportunities and prospects: deep trench, implanta tion…
Power module makers:
Evaluate the availability and benefits of integrating SJ MOS, regarding your own strategy
Benchmark the different manufacturers and make the best choice in the future.
Power converter manufacturers:
Understand the technology inside SJ MOS, and benchmark your suppliers of discrete devices
Understand the market of SJ MOS to anticipate on your supply-chain evolution.
Companies cited in the report:
Alpha omega miconductor, Danfoss, Deboy, Denso, EnPha, EPC Corp, Fairchild, Freescale, Fu
ji electric, Hitachi, Hua hong Nec, Infineon, Internation rectifier, Ixys, Laas lab, Micro GaN, Micromi, Mitsubishi, NEC, NXP, ON Semi, Panasonic, Philips, Powdec, Powerm,
Renesas, Rohm, Sanken, Schneider Electric, Shindengen, ST
Microe lectronics, Toshiba, Toyota, Vincotech, Vishay…
Key features of the report:
Market trends (ASP, Units, M$) and figures with detailed breakdown: By players
By application
Multiple epitaxies and deep trench technology revealed and explained Description and positioning of the technology in terms of applications
Profiling of the players and analysis of their strategy
Profiling of the new entrants and analysis of their status
Analysis of the trends and evolutions in terms of technology and applications
· Introduction – p.3
How is this report built?
Why this report
How is this report built? Topic, definitions and baline
· Executive summary – p.7
Power electronics market
Super Junction MOSFET positioning
Analysis of super junction MOSFET positioning手机卡补卡
2009 global power electronics market size
2006-2015 market size, split by device type
Split by devices, including SJ MOSFET
SJ MOS involvement of power electronics manufacturers
· Applications for Super Junction MOSFETs – p.35 Introduction
How are applications gmented?
SJ MOS in EV/HEV
SJ MOS in PV inverter
SJ MOS in Uninterruptible Power Supplies
SJ MOS in LCD TV
SJ MOS in Lighting applications
SJ MOS in computer power supplies
SJ MOS in Desktop computer AC/DC
SJ MOS in Laptop computer AC/DC
SJ MOS in Server power supplies
SJ MOS in other power supplies
· Trends in SJ MOS Applications – p. 76
SJ MOS is moving to higher voltage
元好问简介
GaN Versus Super junction
Yole market forecat for GaN in power
GaN vs. SJ MOS as of 2011
GaN Product Introduction Roadmap
Conclusion on SJ MOS market trends
· Conclusions on SJ MOS applications– p. 88
济南民俗
SJ MOS drivers per gment
高级情话套路
Split by application as of 2010
SJ MOS market forecast to 2016
· Super Junction MOSFET Market – p.92
Power Electronics discrete devices
Technology split as of 2010
Players market shares as of 2010
SJ MOS Supply-chain
SJ MOSFETs market forecast 2009 – 2016
Assumptions for forecasts and estimations
SJ MOSFETs device production forecast 2010 - 2016
Wafer consumption for SJ MOS - Forecast 2007 - 2016
行驶证怎么办
SJ MOSFETs wafer market share in 2010
我要打篮球
SJ MOS applications - Power range
Split by application as of 2010
Shortage situation
SJ MOS market – Conclusion
· SJ MOSFET Technologies - Who does what – p.107 Super-junction MOSFETs - History
2 technologies: Multi-epi & Deep Trench
Multiple epitaxy technology
Deep trench technology
Cost analysis
