专利名称：METHOD FOR CONTROLLING
ELECTROCHEMICAL DEPOSITION TO AVOID
DEFECTS IN INERCONNECT STRUCTURES
发明人：Jun-Nan NIAN,Shiu-Ko JANGJIAN,Yu-Ren
长渠道PENG,Yao-Hsiang LIANG,Ting-Chun WANG
申请号：US17238080
申请日：20210422
公开号：US20210238765A1
公开日：
20210805
专利内容由知识产权出版社提供
专利附图：
摘要：A method for performing an electrochemical plating (ECP) process includes
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contacting a surface of a substrate with a plating solution comprising ions of a metal to be deposited, electroplating the metal on the surface of the substrate, in situ monitoring a plating current flowing through the plating solution between an anode and the substrate immerd in the plating solution as the ECP process continues, and adjusting a composition of the plating solution in respon to the plating current being below a critical plating current such that voids formed in a subt of conductive lines having a highest line-end density among a plurality of conductive lines for a metallization layer over the substrate are prevented.
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申请人：Taiwan Semiconductor Manufacturing Co., Ltd.qq密码保护
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地址：Hsinchu TW
国籍：TW
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