专利名称：Ambipolar synaptic devices
立春是几号发明人：Ali Afzali-Ardakani,Tze-Chiang Chen,Kailash
Gopalakrishnan,Bahman Hekmatshoartabari
申请号：US14846750
山鸡舞镜
申请日：20150905
毕业设计总结公开号：US09318572B2
两个言念什么公开日：
20160419
专利内容由知识产权出版社提供
三致
专利附图：
摘要：Device architectures bad on trapping and de-trapping holes or electrons and/or recombination of both types of carriers are obtained by carrier trapping either in near-interface deep ambipolar states or in quantum wells/dots, either rving as
ambipolar traps in miconductor layers or in gate dielectric/barrier layers. In either ca, the potential barrier for trapping is small and retention is provided by carrier confinement in the deep trap states and/or quantum wells/dots. The device architectures are usable as three terminal or two terminal devices.
申请人：International Business Machines Corporation
地址：Armonk NY US
刷洗>勤奋的故事国籍：US
猫图片大全可爱代理机构：Otterstedt, Ellenbogen & Kammer, LLP
代理人：Louis J. Percello
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