棱的多音字组词
LM4766Overture ™
五味子片Audio Power Amplifier Series Dual 40W
Audio Power Amplifier with Mute
General Description
The LM4766is a stereo audio amplifier capable of delivering typically 40W per channel of continuous average output power into an 8Ωload with less than 0.1%(THD +N).The performance of the LM4766,utilizing its Self Peak In-stantaneous Temperature (˚Ke)(SPiKe ™)Protection Cir-cuitry,places it in a class above discrete and hybrid amplifi-ers by providing an inherently,dynamically protected Safe Operating Area (SOA).SPiKe Protection means that the parts are safeguarded at t
he output against overvoltage,un-dervoltage,overloads,including thermal runaway and in-stantaneous temperature peaks.
Each amplifier within the LM4766has an independent smooth transition fade-in/out mute that minimizes output pops.The IC’s extremely low noi floor at 2µV and its ex-tremely low THD +N value of 0.06%at the rated power make the LM4766optimum for high-end stereo TVs or mini-component systems.
Key Specifications
j THD+N at 1kHz at 2x 30W continuous average output power into 8Ω:
0.1%(max)
j
THD+N at 1kHz at continuous average output power of 2x 30W into 8Ω:
0.009%(typ)Features
n SPiKe Protection
n Minimal amount of external components necessary n Quiet fade-in/out mute mode
n熊崇君
Non-Isolated 15-lead TO-220package
Applications
n High-end stereo TVs n Component stereo n Compact stereo
Typical Application Note:Numbers in parenthes reprent pinout for amplifier B.
*Optional component dependent upon specific design requirements.
Connection Diagram
SPiKe ™Protection and Overture ™are trademarks of National Semiconductor Corporation.
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FIGURE 1.Typical Audio Amplifier Application Circuit
邵世平Plastic Package
DS100928-2
Top View
Non-Isolated Package Order Number LM4766T See NS Package Number TA15A
September 1998
LM4766Overture ™Audio Power Amplifier Series Dual 40W Audio Power Amplifier with Mute
©1999National Semiconductor Corporation
Absolute Maximum Ratings
(Notes4,5)
If Military/Aerospace specified devices are required, plea contact the National Semiconductor Sale
一个色的综合s Office/ Distributors for availability and specifications.
Supply Voltage|V CC|+|V EE|
(No Input)78V Supply Voltage|V CC|+|V EE|
(with Input)74V Common Mode Input Voltage(V CC or V EE)and
|V CC|+|V EE|≤60V Differential Input Voltage60V Output Current Internally Limited Power Dissipation(Note6)62.5W ESD Susceptability(Note7)3000V Junction Temperature(Note8)150˚C Thermal Resistance
Non-Isolated T-Package
θJC1˚C/W Soldering Information
T Package260˚C Storage Temperature−40˚C to+150˚C
怀旧经典歌曲
Operating Ratings(Notes4,5)
Temperature Range
T MIN≤T A≤T MAX−20˚C≤T A≤+85˚C Supply Voltage|V CC|+|V EE|(Note1)20V to60V
Electrical Characteristics(Notes4,5)
The following specifications apply for V CC=+30V,V EE=−30V,I MUTE=−0.5mA with R L=8Ωunless otherwi specified.
Limits apply for T A=25˚C.
Symbol Parameter Conditions LM4766Units
(Limits)
Typical Limit
(Note9)(Note10)
|V CC|+Power Supply Voltage GND−V EE≥9V1820V(min) |V EE|(Note11)60V(max) P O Output Power THD+N=0.1%(max),
(Note3)(Continuous Average)f=1kHz,f=20kHz4030W/ch(min) THD+N Total Harmonic Distortion30W/
ch,R L=8Ω,20Hz≤f≤20kHz0.06% Plus Noi A V=26dB
X talk Channel Separation f=1kHz,V O=10.9Vrms60dB
顾大嫂SR
(Note3)
Slew Rate V IN=1.2Vrms,t ri=2ns95V/µs(min) I total Total Quiescent Power Both Amplifiers V CM=0V,48100mA(max) (Note2)Supply Current V O=0V,I O=0mA
V OS
(Note2)
Input Offt Voltage V CM=0V,I O=0mA110mV(max) I B Input Bias Current V CM=0V,I O=0mA0.21µA(max) I OS Input Offt Current V CM=0V,I O=0mA0.010.2µA(max) I O Output Current Limit|V CC|=|V EE|=10V,t ON=10ms,43Apk(min)
V O=0V
V OD Output Dropout Voltage|V CC–V O|,V CC=20V,I O=+100mA 1.54V(max) (Note2)(Note12)|V O–V EE|,V EE=−20V,I O=−100mA 2.54V(max) PSRR Power Supply Rejection Ratio V CC=30V to10V,V EE=−30V,12585dB(min) (Note2)V CM=0V,I O=0mA
V CC=30V,V EE=−30V to−10V11085dB(min)
V CM=0V,I O=0mA
CMRR Common Mode Rejection Ratio V CC=50V to10V,V EE=−10V to−50V,11075dB(min) (Note2)V CM=20V to−20V,I O=0mA
A VOL
(Note2)
Open Loop Voltage Gain R L=2kΩ,∆V O=40V11580dB(min) GBWP Gain Bandwidth Product f O=100kHz,V IN=50mVrms82MHz(min) e IN Input Noi IHF—A Weighting Filter 2.08µV(max) (Note3)R IN=600Ω(Input Referred)
2
Electrical Characteristics(Notes4,5)(Continued)
The following specifications apply for V CC=+30V,V EE=−30V,I MUTE=−0.5mA with R L=8Ωunless otherwi specified.
Limits apply for T A=25˚C.
Symbol Parameter Conditions LM4766Units
(Limits)
Typical Limit
(Note9)(Note10)
SNR Signal-to-Noi Ratio P O=1W,A—Weighted,98dB
Measured at1kHz,R S=25Ω
P O=25W,A—Weighted112dB
Measured at1kHz,R S=25Ω
A M Mute Attenuation Pin6,11at2.5V11580dB(min) Note1:Operation is guaranteed up to60V,however,distortion may be introduced from SPiKe Protection Circuitry if proper thermal considerations are not taken into account.Refer to the Application Information ction for a complete explanation.
Note2:DC Electrical Test;Refer to Test Circuit#1.
Note3:AC Electrical Test;Refer to Test Circuit#2.
Note4:All voltages are measured with respect to the GND pins(5,10),unless otherwi specified.
Note5:Absolute Maximum Ratings indicate limits beyond which damage to the device may occur.Operating Ratings indicate conditions for which the device is func-tional,but do not guarantee specific performance limits.Electrical Characteristics state DC and AC electrical specifications under particular test conditions which guar-antee specific performance limits.This assumes that the device is within the Operating Ratings.Specifications are not guaranteed for parameters where no limit is giv
en,however,the typical value is a good indication of device performance.
Note6:For operating at ca temperatures above25˚C,the device must be derated bad on a150˚C maximum junction temperature and a thermal resistance of
θJC=1˚C/W(junction to ca)for the T package.Refer to the ction Determining the Correct Heat Sink in the Application Information ction.
Note7:Human body model,100pF discharged through a1.5kΩresistor.
Note8:The operating junction temperature maximum is150˚C,however,the instantaneous Safe Operating Area temperature is250˚C.
Note9:Typicals are measured at25˚C and reprent the parametric norm.
Note10:Limits are guarantees that all parts are tested in production to meet the stated values.
Note11:V EE must have at least−9V at its pin with reference to ground in order for the under-voltage protection circuitry to be disabled.In addition,the voltage dif-ferential between V CC and V EE must be greater than14V.
Note12:The output dropout voltage,V OD,is the supply voltage minus the clipping voltage.Refer to the Clipping Voltage vs.Supply Voltage graph in the Typical Per-formance Characteristics ction.
Test Circuit#1(Note2)(DC Electrical Test Circuit)
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3
Test Circuit#2(Note3)(AC Electrical Test Circuit)
DS100928-4 Bridged Amplifier Application Circuit
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FIGURE2.Bridged Amplifier Application Circuit
4
Single Supply Application
Circuit
Note:*Optional components dependent upon specific design requirements.
Auxiliary Amplifier Application Circuit
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FIGURE 3.Single Supply Amplifier Application Circuit
DS100928-7蚂蚁城
FIGURE 4.Special Audio Amplifier Application Circuit
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