专利名称：Circuit for controlling wordline in SRAM
发明人：Tae Ho Lee
申请号：US10013353
说课步骤寂地申请日：20011213
公开号：US06512718B2
公开日：
麻饼>有关春节的手抄报
20030128
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专利附图：
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摘要：A circuit for controlling a wordline in an SRAM includes an X address decoder for receiving and decoding a ries of X address, and forwarding X address of a relevant cell, a cell block having a plurality of wordlines respectively connected to cells for storage of data, and a plurality of bitlines perpendicular to the wordlines, a wordline糖英语怎么说>黄果树瀑布在哪个省
driver for receiving the X address, and forwarding a wordline enable signal for the cell block, a column lector for lecting one pair of bitlines from the plurality of bitlines, a n amplifier for amplifying, and forwarding an output of the column lector in reading, a write driver for receiving, and providing a driving signal, and a wordline control part for lecting one of a write driver enable signal in writing and a n amplifier enable signal in reading in respon to a read/write identifying signal, to generate a control signal, and forward the control signal after delay of a pret time period, for disabling the wordline.
申请人：HYNIX SEMICONDUCTOR INC.
代理机构：Morgan, Lewis & Bockius LLP
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