(Note 4)
(Note 4, 5)
(Note 4, 5) (Note 4)Notes:
1. Repetitive Rating : Pul width limited by maximum junction temperature
2. L = 2.54mH, I AS = 21A, V DD = 50V, R G = 25 Ω, Starting T J = 25°C
3. I SD ≤ 25A, di/dt ≤ 300A/µs, V DD ≤ BV DSS, Starting T J = 25°C
4. Pul Test : Pul width ≤300µs, Duty cycle ≤2%
5. Esntially independent of operating temperature
I GSSF Gate-Body Leakage Current, Forward V GS = 30 V, V DS = 0 V ----100nA I GSSR
Gate-Body Leakage Current, Rever反手拧拉
V GS = -30 V, V DS = 0 V
-
----100
羊五行属什么
nA
On Characteristics
V GS(th)Gate Threshold Voltage V DS = V GS , I D = 250 µA 2.0-- 4.0V R DS(on)Static Drain-Source On-Resistance
V GS = 10 V, I D = 10.5 A --0.10.14Ωg FS
Forward Transconductance
V DS = 40 V, I D = 10.5 A
--冯积岐
23
--
S
Dynamic Characteristics
C iss Input Capacitance V DS = 25 V, V GS = 0 V, f = 1.0 MHz
--26003400pF C oss Output Capacitance
--290380pF C rss
Rever Transfer Capacitance
--
硫酸的危害
装扮英语60
80
pF
Switching Characteristics
t d(on)Turn-On Delay Time V DD = 125 V, I D = 25 A,R G = 25 Ω
-
-3580ns t r Turn-On Ri Time --195400ns t d(off)Turn-Off Delay Time --300610ns t f Turn-Off Fall Time --180370ns Q g Total Gate Charge V DS = 200 V, I D = 25 A,V GS = 10 V
--95123nC Q gs Gate-Source Charge --12--nC Q gd
Gate-Drain Charge
--
43
--
作文秋天来了nC
Drain-Source Diode Characteristics and Maximum Ratings
I S Maximum Continuous Drain-Source Diode Forward Current ----21A I SM Maximum Puld Drain-Source Diode Forward Current
----84A V SD Drain-Source Diode Forward Voltage V GS = 0 V, I S = 21 A ---- 1.5V t rr Rever Re
covery Time V GS = 0 V, I S = 25 A,
dI F / dt = 100 A/µs
--300--ns Q rr
经典logo设计
Rever Recovery Charge
-- 3.23
--µC
excel对比
IRF654B/IRFS654B
IRF654B/IRFS654B
