KSP2222A
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T a =25°C unless otherwi noted
Electrical Characteristics T a =25°C unless otherwi noted
* Pul Test: Pul Width ≤300µs, Duty Cycle ≤2%* Also available as and PN2222A
Symbol Parameter
Value Units V CBO Collector-Ba Voltage 75V V CEO Collector-Emitter Voltage 40V V EBO Emitter-Ba Voltage 6V I C Collector Current
600mA P C Collector Power Dissipation 625mW T J Junction Temperature 150°C T STG
Storage Temperature
-55 ~ 150
°C
Symbol Parameter
Test Condition Min.Typ.
Max.
Units BV CBO Collector-Ba Breakdown Voltage I C =10µA, I E =075V BV CEO Collector Emitter Breakdown Voltage I C =10mA, I B =040V BV EBO Emitter-Ba Breakdown Voltage I E =10µA, I C =06
V I CBO Collector Cut-off Current V CB =60V, I E =00.01µA I EBO Emitter Cut-off Current V EB =3V, I C =010
nA
h FE
DC Current Gain
然开头的成语接龙I C =0.1mA, V CE =10V V CE =10V, I C =1mA V CE =10V, I C =10mA V CE =10V, *I C =150mA V C
E =10V, *I C =500mA 35507510040300V CE (sat)* Collector-Emitter Saturation Voltage I C =150mA, I B =15mA I C =500mA, I B =50mA 0.31V V V BE (sat)* Ba-Emitter Saturation Voltage I C =150mA, I B =15mA I C =500mA, I B =50mA 0.6
1.22
V V f T Current Gain Bandwidth Product V CE =20V, I C =20mA f=100MHz
300
MHz C ob Output Capacitance V CB =10V, I E =0, f=1MHz 8pF t ON Turn On Time V CC =30V, I C =150mA
I B1=15mA, V BE (off)=0.5V 35ns t OFF Turn Off Time V CC =30V, I C =150mA I B1=I B2=15mA 285ns NF
Noi Figure
I C =100µA, V CE =10V R S =IK Ω, f=1KHz
46820
头发色板图片大全
dB
金丝枣糕KSP2222A
General Purpo Transistor
•Collector-Emitter Voltage: V CEO = 40V
•Collector Power Dissipation: P C (max)=625mW •Refer KSP2222 for graphs
1. Emitter
2. Ba
3. Collector
TO-92
1
KSP2222A
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Datasheet Identification Product Status Definition
Advance Information
Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.Fairchild Semiconductor rerves the right to make changes at any time without notice in order to improve design.
No Identification Needed Full Production
This datasheet contains final specifications. Fairchild Semiconductor rerves the right to make changes at any time without notice in order to improve design.Obsolete Not In Production
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