1
Designer's ™Data Sheet SWITCHMODE Series
NPN Silicon Power Transistors
The transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line–operated switchmode applications. The MJ16012 and MJW16012 are lected high gain versions of the MJ16010 and MJW16010 for applications where drive current is limited. •Switching Regulators •Fast Turn–Off Times — T C = 100°C
•Inverters 50 ns Inductive Fall Time (Typ)
•Solenoids 90 ns Inductive Crossover Time (Typ)•Relay Drivers 800 ns Inductive Storage Time (Typ)•Motor Controls •100_C Performance Specified for:
•
Deflection Circuits
Rever–Biad SOA with Inductive Loads Switching Times with Inductive Loads Saturation Voltages Leakage Currents
Designer’s Data for “Worst Ca” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information prented. SOA Limit
curves — reprenting boundaries on device characteristics — are given to facilitate “worst ca” design.Preferred devices are Motorola recommended choices for future u and best overall value.Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
MOTOROLA SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJ16010/D
查询MJ16010供应商
MJ16010 MJW16010 MJ16012 MJW16012
2Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS (T C = 25_C unless otherwi noted)
小孩不笨2观后感
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (T able 2)
(I C = 100 mA, I B = 0)
V CEO(sus)450——Vdc
Collector Cutoff Current
(V CEV = 850 Vdc, V BE(off) = 1.5 Vdc)
(V CEV = 850 Vdc, V BE(off) = 1.5 Vdc, T C = 100_C)I CEV
————0.251.5mAdc
Collector Cutoff Current
(V CE = 850 Vdc, R BE = 50 Ω, T C = 100_C)I CER —— 2.5mAdc Emitter Cutoff Current (V EB = 6.0 Vdc, I C = 0)
I EBO
—
—
10图解麻衣神相
mAdc
SECOND BREAKDOWN
Second Breakdown Collector Current with Ba Forward Biad I S/b
See Figure 15Clamped Inductive SOA with Ba Rever Biad RBSOA
See Figure 16
ON CHARACTERISTICS (1)
Collector–Emitter Saturation Voltage
(I C = 5.0 Adc, I B = 0.7 Adc)(I C = 10 Adc, I B = 1.3 Adc)
(I C = 10 Adc, I B = 1.3 Adc, T C = 100_C)
V CE(sat)
—————— 2.53.03.0Vdc
Ba–Emitter Saturation Voltage
(I C = 10 Adc, I B = 1.3 Adc)
(I C = 10 Adc, I B = 1.3 Adc, T C = 100_C)V BE(sat)
——
—— 1.51.5Vdc
DC Current Gain
(I C = 15 Adc, V CE = 5.0 Vdc)
h FE
5.0—
—
—
DYNAMIC CHARACTERISTICS
Output Capacitance
(V CB = 10 Vdc, I E = 0, f test = 1.0 kHz)
C ob
——400pF
SWITCHING CHARACTERISTICS
Resistive Load (Table 1)Delay Time t d —20—ns
Ro Time
(I (I t r
—200
—Storage Time C = 10 Adc,
V CC = 250 Vdc,I B1 = 1.3 Adc,B2 = 2.6 Adc,R B2 = 1.6 Ω)
t s —1200—Fall Time
PW = 30 µs,
v 2.0%)
t f
—200—Storage Time Duty Cycle (V t s —650—Fall Time
BE(off) = 5.0 Vdc)
t f
—
80
—
Inductive Load (Table 2)Storage Time (T _C)
t sv —8001800ns
Fall Time
(I C = 100t fi
—50200Crossover Time C = 10 Adc,
I B1 = 1.3 Adc,
V = 5.0 Vdc,t c
—90
250Storage Time BE(off)(T _C)
t sv —1050—Fall Time
V CE(pk) = 400 Vdc)
C = 150t fi
—70
—Crossover Time
t c
—
120
—
(1)Pul T est: Pul Width = 300 µs, Duty Cycle v 2.0%
MJ16010 MJW16010 MJ16012 MJW16012
3
Motorola Bipolar Power Transistor Device Data仓储管理员
百合花作文ELECTRICAL CHARACTERISTICS (T C = 25_C unless otherwi noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (T able 2)
(I C = 100 mA, I B = 0)
V CEO(sus)450——Vdc
Collector Cutoff Current
(V CEV = 850 Vdc, V BE(off) = 1.5 Vdc)
(V CEV = 850 Vdc, V BE(off) = 1.5 Vdc. T C = 100_C)I CEV
————0.251.5mAdc
Collector Cutoff Current
(V CE = 850 Vdc, R BE = 50 Ω, T C = 100_C)I CER —— 2.5mAdc Emitter Cutoff Current (V EB = 6.0 Vdc, I C = 0)
I EBO
—
—
10
mAdc
SECOND BREAKDOWN
Second Breakdown Collector Current with Ba Forward Biad I S/b
See Figure 15Clamped Inductive SOA with Ba Rever Biad RBSOA
See Figure 16
ON CHARACTERISTICS (1)
Collector–Emitter Saturation Voltage
(I C = 5.0 Adc, I B = 0.7 Adc)(I C = 10 Adc, I B = 1.0 Adc)
(I C = 10 Adc, I B = 1.0 Adc, T C = 100_C)
V CE(sat)
—————— 2.53.03.0Vdc
Ba–Emitter Saturation Voltage
(I C = 10 Adc, I B = 1.0 Adc)
(I C = 10 Adc, I B = 1.0 Adc, T C = 100_C)V BE(sat)
——
—— 1.51.5Vdc
DC Current Gain
(I C = 15 Adc, V CE = 5.0 Vdc)
h FE
7.0—
—goagent
—
DYNAMIC CHARACTERISTICS
Output Capacitance
(V CB = 10 Vdc, I E = 0, f test = 1.0 kHz)
C ob
——400pF
SWITCHING CHARACTERISTICS
Resistive Load (Table 1)Delay Time t d —20—ns
Ro Time
(I (I t r
—200—Storage Time C = 10 Adc,
V CC = 250 Vdc,I B1 = 1.0 Adc,B2 = 2.0 Adc,R B2 = 1.6 Ω)
t s —900—Fall Time
PW = 30 µs,
v 2.0%)
t f
—150—Storage Time Duty Cycle (V t s —500—Fall Time
BE(off) = 5.0 Vdc)
t f
—
40
—
Inductive Load (Table 2)Storage Time (T _C)
t sv —6501500ns
Fall Time
(I C = 100t fi
—30150Crossover Time C = 10 Adc,
I B1 = 1.0 Adc,
V = 5.0 Vdc,t c
—50安全防护设施
200Storage Time BE(off)(T _C)
t sv —850—Fall Time
V CE(pk) = 400 Vdc)
C = 150t fi
—30—Crossover Time
t c
—
70
—
(1)Pul T est: Pul Width = 300 µs, Duty Cycle v 2.0%
MJ16010 MJW16010 MJ16012 MJW16012
4Motorola Bipolar Power Transistor Device Data
V C E , C O L L E C T O R –E M I T T E R V O L T A G E (V O L T S )
C , C A P A C I T A N C E (p F )
V B E , B A S E –E M I T T E R V O L T A G E (V O L T S )
V C E , C O L L E C T O R –E M I T T E R V O L T A G E (V O L T S )
0.15I C , COLLECTOR CURRENT (AMPS)
0.3
1.0
1.5
1.00.7
0.45.0I C , COLLECTOR CURRENT (AMPS)3.02.01.00.50.2
0.15
I C = 1.0 A
0.2
Figure 1. DC Current Gain I C , COLLECTOR CURRENT (AMPS)
3.00.5
2.0
10
20
10
5.0
Figure 2. Collector Saturation Region
0.1I B , BASE CURRENT (AMPS)
0.1
0.20.50.70.30.2
50拔字开头的成语
h F E , D C C U R R E N T G A I N
V CE = 5.0 V
1.0
2.0 5.0
10
Figure 3. Collector–Emitter Saturation Voltage 7.0
0.70.150.20.5 1.0
15
2.0
7.0Figure 4. Ba–Emitter Voltage
Figure 5. Collector Cutoff Region 2.0
0.5104V BE , BASE–EMITTER VOLTAGE (VOLTS)
10–100.05
T C = 25°C
5.0 A
T C = 100°C
25°C
20
1.0 5.0βf = 5.0T C = 25°C
15
–0.4
Figure 6. Capacitance
10000V R , REVERSE VOLTAGE (VOLTS)
C ob 0.1
, C O L L E C T O R C U R R E N T (A )
µI C 10 A
15 A
βf = 10T C = 25°C
βf = 10T C = 100°C
0.3T C = 25°C
βf = 10
103
102101100–0.2+0.2+0.4
+0.6
T J = 150°C
125°C 100°C 75°C REVERSE
FORWARD
25°C
V CE = 250 V
5000200010005002001005020100.30.5 1.0 2.0 5.010*******
500850
1.00.05
0.02
0.70.3
3.0
5.010
0.070.10.30.7100°C
75°C T C = 25°C
0.2
0.50.20.5 3.0
2.0
5.0
10
300300030300C ib
TYPICAL STATIC CHARACTERISTICS
MJ16010 MJW16010 MJ16012 MJW16012
5
Motorola Bipolar Power Transistor Device Data
t c , C R O S S O V E R T I M E (n s )
t f i , C O L L E C T O R C U R R E N T F A L L T I M E (n s )
I C , COLLECTOR CURRENT (AMPS)
Figure 7. Storage Time Figure 8. Storage Time公司机制
I C , COLLECTOR CURRENT (AMPS)2.0 3.0 5.07.015
500020001000200500300, S T O R A G E T I M E (n s )
t s v 1.5
100I C , COLLECTOR CURRENT (AMPS)2.0 3.0 5.07.015100030020010050101.5
20I C , COLLECTOR CURRENT (AMPS)
I C , COLLECTOR CURRENT (AMPS)2.0 3.0 5.07.015
50030020010050
151.5
I C , COLLECTOR CURRENT (AMPS)
Figure 9. Collector Current Fall Time Figure 10. Collector Current Fall Time
Figure 11. Crossover Time
Figure 12. Crossover Time
2.0 V V BE(off) = 0 V
5.0 V
βf * = 5.0T C = 75°C V CC = 20 V
2.0
3.0
5.0
7.0
15
500020001000700500300, S T O R A G E T I M E (n s )
t s v 1.5
200 2.0 V V BE(off) = 0 V
5.0 V
V BE(off) = 0 V
2.0 V 5.0 V t f i , C O L L E C T O R C U R R E N T F A L L T I M E (n s )
1000300200100501020 2.0 V
V BE(off) = 0 V
5.0 V 5.0 V 2.0 V
V BE(off) = 0 V
t c , C R O S S O V E R T I M E (n s )
2.0
3.0
5.0
7.015
500
30020010020151.5
V BE(off) = 0 V
2.0 V 5.0 V
βf * = 10T C = 75°C V CC = 20 V
1030000.070.0510
30001000.05βf * = 10T C = 75°C V CC = 20 V βf * = 10T C = 75°C V CC = 20 V βf * = 5.0T C = 75°C V CC = 20 V
βf * = 5.0T C = 75°C V CC = 20 V
50010 2.0
3.0
5.0
7.015
1.5
105001010201500100050
10001500*βf =I C
I B1
