1. a 截止频率 alpha cutoff frequency
2.禁带变窄 band gap narrowing
3.基区渡越时间ba transit time
4.基区输运系数 ba transport factor马歇尔稳定度试验
5.基区宽度调制效应ba width modulation.4截止频率 beta cutoff frequency
7.集电结电容充电时间 collector capacitance charging time
8.集电结耗尽区渡越时间 collector depletion region transit time
9.共基极电流增益 common-ba current gain
10. 共放射极电流增益 common-emitter current gain
11. 电流集边 current crowding
12.截止频率 cutoff frequency
13. 厄尔利电压early voltage
父亲过生日送什么礼物好14. £-8结电容充电时间 emitter-ba junction capacitance charging time. 放射极注入效率系数 emitter injection efficiency factor
薯片的做法15.正向有源 forward active.反向有源 inver active
16.输出电导 output conductance.积累层电荷 accumulation layer charge
17. 体电荷效应 bulk charge effect.沟道电导 channel conductance正确教育官网
大别山彩虹瀑布18. 沟道电导调制 channel conductance modulation.互补金属氧化物半导体CMOS
19. 耗尽型 MOS 场效应管 depletion mode MOSFET.增加型 MOS 场效应管 enhancement mode MOSFET
27.平带电压 flat-band voltage. 栅电容充电时间 gate capacitance charging time
28.界面态 interface state.反型层电荷 inversion layer charge
29.反型层迁移率 inversion layer mobility.闩锁 latch-up
30. 最大空间电荷区宽度 maximum induced space charge width.金属-半导体功函数差 metal-miconductor work function difference
31.临界反型 moderate inversion.栅氧化层电容 oxide capacitance
32.饱和 saturation.强反型 strong inversion
33. 阀值反型点 threshold inversion point
34.阀值电压 threshold voltage.跨导 transconductance
35.弱反型 weak inversion.沟道长度调制 channel length modulation
36衬衣怎么洗.热电子 hot electrons.轻掺杂漏 lightly doped drain
37.窄沟道效应 narrow-channel effects.源漏穿通 near punch-through党派怎么填
38.短沟道效应 short-channel effects.寄生晶体管击穿snapback
39.云图六重奏亚阀值电导 subthreshold conduction.表面散射 surface scattering
53. 耗尽型结型场效应管depletion mode JFET.增加型结型场效应管enhancement mode JFET
54.夹断 pinchoff. 发光二极管 LED light emitting diode
55.瞬时间电流 prompt photocurrent. 半导体可控整流器 SCR miconductor controlled rectifier
56.半导体闸流管thyristor.三端双向可控硅开关元件triac
