SPAD array with gated histogram construction

更新时间:2023-07-07 00:09:35 阅读: 评论:0

专利名称:SPAD array with gated histogram
construction
发明人:Anup K. Sharma,Arnaud Laflaquière,Gennadiy
霞水母
A. Agranov,Gershon Ronblum,Shingo
霍金智商Mandai
申请号:US14830760
红茶茶叶申请日:20150820
公开号:US10620300B2
截稿日期公开日:
来电彩铃20200414
蛇怕雄黄吗
专利内容由知识产权出版社提供
专利附图:
摘要:A nsing device includes a first array of nsing elements, which output a signal
indicative of a time of incidence of a single photon on the nsing element. A cond array of processing circuits are coupled respectively to the nsing elements and compri a gating generator, which variably ts a start time of the gating interval for each nsing element within each acquisition period, and a memory, which records the time of incidence of the single photon on each nsing element in each acquisition period.
A controller controls the gating generator during a first quence of the acquisition periods so as to sweep the gating interval over the acquisition periods and to identify a respective detection window for the nsing element, and during a cond quence of the acquisition periods, to fix the gating interval for each nsing element to coincide with the respective detection window.
申请人:Apple Inc.数学文化知识
地址:Cupertino CA US
枪支图片国籍:US
代理机构:Kligler & Associates Patent Attorneys Ltd
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