燕窝炖雪梨
专利名称：Pinned photodiode (PPD) pixel with high
shutter rejection ratio for snapshot
operating CMOS nsor
发明人：Taner Dosluoglu,Guang Yang
申请号：US12229749
申请日：20080826
公开号：US20090042331A1
海鲜粉公开日：
如何集中注意力20090212梏
专利内容由知识产权出版社提供
专利附图：
师说理解性默写及答案
摘要：A method for forming a pixel image nsor that has a high shutter rejection ratio for preventing substrate charge leakage and prevents generation of
photoelectrons within a floating diffusion storage node and storage node control transistor switches of the pixel image nsor. The pixel image nsor that prevents substrate charge leakage of photoelectrons from pixel image nsor adjacent to the pixel image nsor. The pixel image nsor is fabricated on a substrate with an isolation barrier and a carrier conduction well. The isolation barrier formed underneath the floating diffusion storage node allows effective isolation by draining away the stray carriers and preventing them from reaching the floating diffusion storage node. The carrier conduction well in combination with the deep N-well isolation barrier parates the pinned photodiode region from the deep N-well isolation barrier that is underneath the floating diffusion storage node.
申请人：Taner Dosluoglu,Guang Yang考察材料模板
复旦大学校长地址：New York NY US,Annandale NJ US
国籍：US,US微博二维码
更多信息请下载全文后查看
