To all our customers
Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.
猪肘子的做法大全The miconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. The operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, the names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and the changes do not constitute any alteration to the contents of the document itlf.
Renesas Technology Home Page:
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
Cautions
Keep safety first in your circuit designs!
1. Renesas Technology Corporation puts the maximum effort into making miconductor products better
and more reliable, but there is always the possibility that trouble may occur with them. Trouble with miconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) u of nonflammable material or (iii) prevention against any malfunction or mishap.
Notes regarding the materials
1. The materials are intended as a reference to assist our customers in the lection of the Renesas
Technology Corporation product best suited to the customer's application; they do not convey any licen under any intellectual property rights, or any other rights, belonging to Renesas Technology Corporation or a third party.
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third-party's rights, originating in the u of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in the materials.
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algorithms reprents information on products at the time of publication of the materials, and are subject to change by Renesas Technology Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor for the latest product information before purchasing a product listed herein.
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Plea also pay attention to information published by Renesas Technology Corporation by various means, including the Renesas Technology Corporation Semiconductor home page
().
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information contained herein.
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or system that is ud under circumstances in which human life is potentially at stake. Plea contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor when considering the u of a product contained herein for any specific purpos, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undera repeater u.
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Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the
country of destination is prohibited.
8. Plea contact Renesas Technology Corporation for further details on the materials or the products
contained therein.
HZ Series
Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply
ADE-208-117B(Z)
Rev. 2
Nov. 1999 Features
•Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc.
•Wide spectrum from 1.6V through 38V of zener voltage provide flexible application.
Ordering Information
Type No. Mark Package Code
HZ Series Type No. DO-35
Pin Arrangement
HZ Series
Rev.2, Nov. 1999, page 2 of 8
Absolute Maximum Ratings
(Ta = 25°C)
k4076
Item Symbol Value Unit Power dissipation Pd 500 mW Junction temperature Tj 175 °C Storage temperature Tstg
-55 to +175
°C
Electrical Characteristics
(Ta = 25°C)
Zener Voltage Rever Current Dynamic Resistance
V Z (V)*1
Test
Condition
I R (µA) Test
Condition
r d (Ω) Test
Condition Ty p
e Grade Min
Max I Z (mA)
Max
V R (V)
Max
I Z (mA)
HZ2 A1 1.6 1.8 5 25 0.5 100 5 A2 1.7 1.9 A3 1.8 2.0 B1 1.9 2.1 5 5 0.5 100 5
B2 2.0 2.2 B3 2.1 2.3 C1 2.2 2.4 C2 2.3 2.5 C3 2.4 2.6 HZ3 A1 2.5 2.7 5 5 0.5 100 5 A2 2.6 2.8 A3 2.7 2.9 B1 2.8 3.0 B2 2.9 3.1 B3 3.0 3.2 C1 3.1 3.3 C2 3.2 3.4 C3 3.3 3.5 HZ4 A1 3.4 3.6 5 5 1.0 100 5 A2 3.5 3.7 A3 3.6 3.8
Note: 1. Tested with DC.
HZ Series
总经理培训课程
Rev.2, Nov. 1999, page 3 of 8
Zener Voltage Rever Current Dynamic Resistance
V Z (V)*1
Test
Condition
I R (µA) Test
Condition
r d (Ω) Test
哑铃练肩
Condition Ty p
鳞毛蕨
e Grade Min Max I Z (mA) Max
V R (V)
Max
I Z (mA)
HZ4 B1 3.7
3.9 5
5 1.0 100 5 B2 3.8 4.0 B3 3.9 4.1 C1 4.0 4.2 C2 4.1 4.3 C3 4.2 4.4 HZ5 A1 4.3
4.5 5
5 1.5 100 5 A2 4.4 4.
6 A3 4.5 4.
7 B1 4.6 4.
8 B2 4.7 4.
9 B3 4.8 5.0 C1 4.9 5.1 C2 5.0 5.2 C3 5.1 5.3 HZ6 A1 5.2
5.5 5
5 2.0 40 5 A2 5.3 5.
6 A3 5.4 5.
7 B1 5.5 5.为什么经常打喷嚏
8 B2 5.6 5.
9 B3 5.7 6.0 C1 5.8 6.1 C2 6.0 6.3 C3 6.1 6.4 HZ7 A1 6.3
6.6 5
1 3.5 15 5 A
2 6.4 6.7 A
泛起涟漪3 6.6 6.9 B1 6.7 7.0 B2 6.9 7.2 B3 7.0 7.3
Note: 1. Tested with DC.