专利名称：GAN-BASED SUPER-JUNCTION VERTICAL POWER TRANSISTOR AND
MANUFACTURING METHOD THEREFOR 发明人：HUANG, Sen，黄森,WANG, Xinhua，王鑫华,LIU, Xinyu，刘新宇,WANG, Yuankun，王元琨,YIN,
帮助排便的食物
Haibo，殷海波,WEI, Ke，魏珂
城市发展方向婴儿湿疹怎么治申请号：CN2019/078113羁绊隐藏英雄密码
申请日：20190314誓空大师
公开号：WO2020/181548A1
公开日：
钱学森精神
20200917
专利内容由知识产权出版社提供
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摘要：A GaN-bad super-junction vertical power transistor and a manufacturing method therefor. The transistor compris: an N-GaN layer; a P-GaN layer, as a current blocking layer, formed on the NGaN layer, a gate region window being provided in the P-GaN layer; and a thin barrier Al(In,Ga)N/GaN heterostructure conformally fabricated on the current blocking layer and filling the bottom and sidewalls of the gate region window, wherein etching grooves are provided in the NGaN layer, the etching grooves are completely filled or partially filled with a cond P-type GaN layer, an N-GaN layer is formed under the cond P-type GaN layer, and the N-GaN layer is in direct contact with both the cond P-type GaN layer and the N GaN layer to form a super-junction composite structure. By providing a super-junction composite structure, the expansion of a super-junction space charge region is implemented, the region of a device subjected to a high electric field is incread, and the peak breakdown electric field of the device is effectively ead, thereby improving the breakdown voltage of the device, and by using a thin barrier heterostructure, an enhanced gate structure without etching is achieved, and high voltage resistance and high power are provided, thereby prompting the application of the device.
申请人：INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES，中国科学
院微电子研究所
地址：No. 3 Beitucheng West Road, Chaoyang District Beijing 100029 CN，中国北京市朝阳区北土城西路3号, Beijing 100029 CN
国籍：CN,CN
代理人：CHINA SCIENCE PATENT & TRADEMARK AGENT LTD.，中科专利商标代理有限责任公司
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