RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequen-
cies to 175 MHz. The high gain and broadband performance of the devices
make them ideal for large-signal, common source amplifier applications in
12.5 volt mobile FM equipment.
•Specified Performance @ 175 MHz, 12.5 Volts
Output Power — 50 Watts
Power Gain — 12 dB
白鹿原小说Efficiency — 50%
•Capable of Handling 20:1 VSWR, @ 15.6 Vdc, 175 MHz, 2 dB Overdrive
Features
•Excellent Thermal Stability
•Characterized with Series Equivalent Large-Signal Impedance Parameters
•Broadband-Full Power Across the Band: 135-175 MHz
•Broadband Demonstration Amplifier Information Available
Upon Request
•200_C Capable Plastic Package
•N Suffix Indicates Lead-Free Terminations. RoHS Compliant.
•In Tape and Reel. T1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating Symbol
Value Unit Drain-Source Voltage V DSS-0.5, +40Vdc Gate-Source Voltage V GS±20Vdc Drain Current — Continuous I D12Adc Total Device Dissipation @ T C = 25°C (1)
Derate above 25°C
P D165
0.50
W
W/°C Storage Temperature Range T stg-65 to +150°C Operating Junction Temperature T J200°C Table 2. Thermal Characteristics
Characteristic Symbol Value(2)Unit Thermal Resistance, Junction to Ca RθJC0.75°C/W Table 3. Moisture Sensitivity Level
Test Methodology Rating Package Peak Temperature Unit Per JESD 22-A113, IPC/JEDEC J-STD-0201260°C
1.Calculated bad on the formula P D =意识英语
2.MTTF calculator available at /rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
Document Number: MRF1550N
Rev. 11, 9/2006 Freescale Semiconductor
Technical Data
MRF1550NT1
MRF1550FNT1
T J–T C
RθJC
2
RF Device Data
Freescale Semiconductor
MRF1550NT1 MRF1550FNT1Table 4. Electrical Characteristics (T C = 25°C unless otherwi noted)
Characteristic
Symbol
Min
Typ
Max
卫生部长Unit
Off Characteristics
Zero Gate Voltage Drain Current (V DS = 60 Vdc, V GS = 0 Vdc)I DSS ——1μAdc Gate-Source Leakage Current (V GS = 10 Vdc, V DS = 0 Vdc)I GSS
—
—
0.5
μAdc
含有月的成语
On Characteristics
Gate Threshold Voltage
(V DS = 12.5 Vdc, I D = 800 μA)V GS(th)1—3Vdc Drain-Source On-Voltage (V GS = 5 Vdc, I D = 1.2 A)R DS(on)——0.5ΩDrain-Source On-Voltage
(V GS = 10 Vdc, I D = 4.0 Adc)V DS(on)
—
—
1
Vdc
Dynamic Characteristics
Input Capacitance (Includes Input Matching Capacitance)(V DS = 12.5 Vdc, V GS = 0 V, f = 1 MHz)C iss ——500pF Output Capacitance
(V DS = 12.5 Vdc, V GS = 0 V, f = 1 MHz)C oss ——250pF Rever Transfer Capacitance
(V DS = 12.5 Vdc, V GS = 0 V, f = 1 MHz)C rss
—
—
35
pF
RF Characteristics (In Freescale Test Fixture)Common-Source Amplifier Power Gain
(V DD = 12.5 Vdc, P out = 50 Watts, I DQ = 500 mA) f = 175 MHz G ps —14.5—dB Drain Efficiency
(V DD = 12.5 Vdc, P out = 50 Watts, I DQ = 500 mA)
f = 175 MHz
η
—
55
—
%
MRF1550NT1 MRF1550FNT1
3
RF Device Data
Freescale Semiconductor
Figure 1. 135 - 175 MHz Broadband Test Circuit
B1Ferroxcube #VK200
C1180 pF, 100 mil Chip Capacitor C210 pF, 100 mil Chip Capacitor C3
33 pF, 100 mil Chip Capacitor C4, C1624 pF, 100 mil Chip Capacitors C5160 pF, 100 mil Chip Capacitor C6
240 pF, 100 mil Chip Capacitor C7, C17300 pF, 100 mil Chip Capacitors C8, C1810 μF, 50 V Electrolytic Capacitors C9, C190.1 μF, 100 mil Chip Capacitors C10
470 pF, 100 mil Chip Capacitor C11, C12200 pF, 100 mil Chip Capacitors C1322 pF, 100 mil Chip Capacitor C1430 pF, 100 mil Chip Capacitor C15 6.8 pF, 100 mil Chip Capacitor C201,000 pF, 100 mil Chip Capacitor L118.5 nH, Coilcraft #A05T L2 5 nH, Coilcraft #A02T
L3 1 Turn, #24 AWG, 0.250″ ID
L4 1 Turn, #26 AWG, 0.240″ ID L5
3 Turn, #2
4 AWG, 0.180″ ID N1, N2Type N Flange Mounts R1 5.1 Ω, 1/4 W Chip Resistor R239 Ω Chip Resistor (0805)R3 1 k Ω, 1/8 W Chip Resistor R433 k Ω, 1/4 W Chip Resistor Z1 1.000″ x 0.080″ Microstrip Z20.400″ x 0.080″ Microstrip Z30.200″ x 0.080″ Microstrip Z40.200″ x 0.080″ Microstrip Z5, Z60.100″ x 0.223″ Microstrip Z70.160″ x 0.080″ Microstrip Z80.260″ x 0.080″ Microstrip Z90.280″ x 0.080″ Microstrip Z100.270″ x 0.080″ Microstrip Z110.730″ x 0.080″ Microstrip Board Glass Teflon ®, 31 mils
RF INPUT
TYPICAL CHARACTERISTICS
P out , OUTPUT POWER (WATTS)
Figure 2. Output Power versus Input Power
P in , INPUT POWER (WATTS)
10Figure 3. Input Return Loss versus Output Power
P o u t , O U T P U T P O W E R (W A T T S )
302006050407080
4
RF Device Data
Freescale Semiconductor
MRF1550NT1 MRF1550FNT1TYPICAL CHARACTERISTICS
G A I N (d B )
Figure 8. Output Power versus Supply Voltage V DD , SUPPLY VOLTAGE (VOLTS)Figure 9. Drain Efficiency versus Supply Voltage
V DD , SUPPLY VOLTAGE (VOLTS)
1216
P o u t , O U T P U T P O W E R (W A T T S )
十堰市房县P o u t , O U T P U T P O W E R (W A T T S )
15
MRF1550NT1 MRF1550FNT1
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
210
1011T J , JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours x ampere 2drain current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide MTTF factor by I D 2 for MTTF in a particular application.
袜子英文
1010
108
M T T F F A C T O R (H O U R S X A M P S 2)
90110130150170190100120140160180200Figure 10. MTTF Factor versus Junction Temperature
109
6
RF Device Data Freescale Semiconductor
MRF1550NT1 MRF1550FNT1
Z in=Complex conjugate of source
impedance.
舌苔看胃病
Z OL*=Complex conjugate of the load
impedance at given output power,
voltage, frequency, and ηD > 50 %.
f
MHz
Z in
Ω
Z OL*
Ω
135 4.1 + j0.5 1.0 + j0.6
猫头鹰卡通
V DD = 12.5 V, I DQ = 500 mA, P out = 50 W
155 4.2 + j1.7 1.2 + j.09
175 3.7 + j2.30.7 + j1.1
f = 135 MHz
f = 175 MHz
Z OL*
Z o = 10 Ω
Z in
f = 135 MHz
f = 175 MHz
Figure 11. Series Equivalent Input and Output Impedance
Z in Z OL*
Output
Matching
Network
