RF Power Field Effect Transistor
N-Channel Enhancement-Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with frequen-cies to 520 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common source amplifier applications in 7.5 volt portable and 12.5 volt mobile FM equipment.
•Specified Performance @ 520 MHz, 12.5 Volts
Output Power — 3 Watts Power Gain — 15 dB Efficiency — 65%
•Capable of Handling 20:1 VSWR, @ 15.5 Vdc, 520 MHz, 2 dB Overdrive Features
•Excellent Thermal Stability
•Characterized with Series Equivalent Large-Signal Impedance Parameters
•
桂花树的特点
ps反选选区•In Tape and Reel. T1 Suffix = 1,000 Units per 12 mm,
7 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol Value Unit Drain-Source Voltage V DSS -0.5, +40Vdc Gate-Source Voltage V GS ±20Vdc Drain Current — Continuous
I D 2Adc Total Device Dissipation @ T C = 25°C (1)Derate above 25°C P D 31.250.25W W/°C Storage Temperature Range T stg -65 to +150
°C Operating Junction Temperature
T J
150
°C
Table 2. Thermal Characteristics
Characteristic
Symbol Value (2)
Unit Thermal Resistance, Junction to Ca
R θJC
4
°C/W
Table 3. Moisture Sensitivity Level
Test Methodology
Rating Package Peak Temperature
Unit Per JESD22-A113, IPC/JEDEC J-STD-0203
260
°C
1.Calculated bad on the formula P D =
2.MTTF calculator available at /rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product.
Document Number: MRF1513N
Rev. 12, 6/2009
Freescale Semiconductor Technical Data
MRF1513NT1
520 MHz, 3 W, 12.5 V LATERAL N-CHANNEL
BROADBAND RF POWER MOSFET
S T J –T C
R θJC
MRF1513NT1Table 4. Electrical Characteristics (T A = 25°C unless otherwi noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Current (V DS = 40 Vdc, V GS = 0 Vdc)I DSS ——1μAdc Gate-Source Leakage Current (V GS = 10 Vdc, V DS = 0 Vdc)I GSS
—
—
1
μAdc
On Characteristics
Gate Threshold Voltage
(V DS = 12.5 Vdc, I D = 60 μA)V GS(th)1 1.7 2.1Vdc Drain-Source On-Voltage
(V GS = 10 Vdc, I D = 500 mAdc)V DS(on)
—
0.65
—
Vdc
Dynamic Characteristics
Input Capacitance
(V DS = 12.5 Vdc, V GS = 0, f = 1 MHz)C iss —33—pF Output Capacitance
(V DS = 12.5 Vdc, V GS = 0, f = 1 MHz)C oss —16.5—pF Rever Transfer Capacitance
(V DS = 12.5 Vdc, V GS = 0, f = 1 MHz)C rss
—
三亚哪里好玩2.2
—
pF
Functional Tests (In Freescale Test Fixture)
Common-Source Amplifier Power Gain
(V DD = 12.5 Vdc, P out = 3 Watts, I DQ = 50 mA, f = 520 MHz)G ps —15—dB Drain Efficiency
(V DD = 12.5 Vdc, P out = 3 Watts, I DQ = 50 mA, f = 520 MHz)
η
—
65
—
%
MRF1513NT1
Figure 1. 450 - 520 MHz Broadband Test Circuit
V DD RF
B1, B2
Short Ferrite Beads, Fair Rite Products #2743021446
C1, C13
240 pF, 100 mil Chip Capacitors C2, C3, C4, C10,C11, C120 to 20 pF Trimmer Capacitors C5, C6, C17120 pF, 100 mil Chip Capacitors C7, C1410 m F, 50 V Electrolytic Capacitors C8, C151,200 pF,
100 mil Chip Capacitors C9, C160.1 m F, 100 mil Chip Capacitors L1
55.5 nH, 5 Turn, Coilcraft N1, N2Type N Flange Mounts
R1, R315 Ω Chip Resistors (0805)R2
1 k Ω, 1/8 W Resistor
R433 k Ω, 1/8 W Resistor Z10.236″ x 0.080″ Microstrip Z20.981″ x 0.080″ Microstrip Z30.240″ x 0.080″ Microstrip Z40.098″ x 0.080″ Microstrip Z50.192″ x 0.080″ Microstrip Z6, Z70.260″ x 0.223″ Microstrip Z80.705″ x 0.080″ Microstrip Z90.342″ x 0.080″ Microstrip Z100.347″ x 0.080″ Microstrip Z110.846″ x 0.080″ Microstrip
Board Glass Teflon ®, 31 mils, 2 oz. Copper
TYPICAL CHARACTERISTICS, 450 - 520 MHz
P out , OUTPUT POWER (WATTS)
Figure 2. Output Power versus Input Power
P in , INPUT POWER (WATTS)
1
Figure 3. Input Return Loss versus Output Power
P o u t , O U T P U T P O W E R (W A T T S )
32
04
MRF1513NT1TYPICAL CHARACTERISTICS, 450 - 520 MHz
P out , OUTPUT POWER (WATTS)
Figure 4. Gain versus Output Power P out , OUTPUT POWER (WATTS)
Figure 5. Drain Efficiency versus Output Power
G A I N (d B )
Figure 8. Output Power versus Supply Voltage V DD , SUPPLY VOLTAGE (VOLTS)
Figure 9. Drain Efficiency versus Supply Voltage
V DD , SUPPLY VOLTAGE (VOLTS)
1216P o u t , O U T P U T P O W E R (W A T T S )
P o u t , O U T P U T P O W E R (W A T T S )
15
MRF1513NT1
怎么搞定金牛男Figure 10. 400 - 470 MHz Broadband Test Circuit
V DD
RF INPUT
暗度陈仓什么意思
B1, B2Short Ferrite Bead, Fair Rite Products #2743021446
C1, C12330 pF, 100 mil Chip Capacitors C2, C3, C4,C10, C11 1 to 20 pF Trimmer Capacitors C5, C6, C16120 pF, 100 mil Chip Capacitors C7, C1310 μF, 50 V Electrolytic Capacitors C8, C141,200 pF, 100 mil Chip Capacitors C9, C150.1 m F, 100 mil Chip Capacitors L1
55.5 nH, 5 Turn, Coilcraft N1, N2Type N Flange Mounts R115 Ω Chip Resistor (0805)R2个人信托
1 k Ω, 1/8 W Resistor
R315 Ω Chip Resistor (0805)R433 k Ω, 1/8 W Resistor Z10.253″ x 0.080″ Microstrip Z20.958″ x 0.080″ Microstrip Z30.247″ x 0.080″ Microstrip Z40.193″ x 0.080″ Microstrip Z50.132″ x 0.080″ Microstrip Z6, Z70.260″ x 0.223″ Microstrip Z80.494″ x 0.080″ Microstrip Z90.941″ x 0.080″ Microstrip Z100.452″ x 0.080″ Microstrip
Board Glass Teflon ®, 31 mils, 2 oz. Copper
TYPICAL CHARACTERISTICS, 400 - 470 MHz
P out , OUTPUT POWER (WATTS)
20
1
红书读后感
Figure 11. Output Power versus Input Power
P in , INPUT POWER (WATTS)
2
Figure 12. Input Return Loss
versus Output Power
P o u t , O U T P U T P O W E R (W A T T S )
0.080.02如何清蒸大闸蟹
1
0.06
0.12
0.0405
3
0.10
3
4
4
5
MRF1513NT1TYPICAL CHARACTERISTICS, 400 - 470 MHz
P out , OUTPUT POWER (WATTS)
Figure 13. Gain versus Output Power
P out , OUTPUT POWER (WATTS)
Figure 14. Drain Efficiency versus Output
Power
G A I N (d B )
Figure 17. Output Power versus
Supply Voltage V DD , SUPPLY VOLTAGE (VOLTS)
Figure 18. Drain Efficiency versus
Supply Voltage
V DD , SUPPLY VOLTAGE (VOLTS)
1418P o u t , O U T P U T P O W E R (W A T T S )
P o u t , O U T P U T P O W E R (W A T T S )
17
