纹丝不动ipad和平板有什么区别专利名称：High speed broadband silicon
photodetector
发明人：Liang-fu Lou
申请号：US07/498185
申请日：19900322
公开号：US05059787A
公开日：
征兵年龄19911022虫儿飞谱子
蚂蚁作文400字
专利内容由知识产权出版社提供
21cn企业邮箱
摘要：A high speed wideband silicon photodetector is formed from a photonsitive junction in a relatively thin epitaxial layer of silicon grown on a sapphire substrate using SOS technology. The photodetector is backside illuminated, that is, illumination to be detected is cau to strike a receptor surface of the sapphire substrate so that it can reach the photonsitive junction in the silicon layer even with the shallower minimum penetration depths available at higher frequencies. A bias voltage may be applied to extend the depletion region from the photonsitive junction to the silicon sapphire interface. A magnesium fluoride anti-reflective coating may be ud on the sapphire reflective surface.
申请人：NORTHROP CORPORATION体育教育训练学
代理人：Terry J. Anderson,Robert B. Block花钟说课稿
更多信息请下载全文后查看
