专利名称：Broadband light-emitting diode
发明人：Ian J. Fritz,John F. Klem,Michael J. Hafich 申请号：US08/612361
宜宾特色美食申请日：19960307
公开号：US05780867A
小区物业管理
公开日：
打屁股潇湘
漆油鸡
不积跬步无以至千里19980714
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测量实习报告
摘要：A broadband light-emitting diode. The broadband light-emitting diode (LED) compris a plurality of III-V compound miconductor layers grown on a miconductor substrate, with the miconductor layers including a pair of cladding layers sandwiched about a strained-quantum- well active region having a plurality of different energy bandgaps for generating light in a wavelength range of about 1.3-2 &mgr;m. In one embodiment of the prent invention, the active region may compri a first-grown quantum-well layer and a last-grown quantum-well layer that are oppositely strained; whereas in another embodiment of the invention, the active region is formed from a short-period superlattice structure (i. e. a pudo alloy) comprising alternating thin layers of InGaAs and InGaAlAs. The u a short-period superlattice structure for the active region allows different layers within the active region to be simply and accurately grown by repetitively opening and closing one or more shutters in an MBE growth apparatus to repetitively switch between different growth states therein. The broadband LED may be formed as either a surface-emitting LED or as an edge-emitting LED for u in applications such as chemical nsing, fiber optic gyroscopes, wavelength-division-multiplexed (WDM) fiber-optic data links, and WDM fiber-optic nsor networks for automobiles and aircraft.
申请人：SANDIA CORPORATION 代理人：John P. Hohimer
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