•Inline photoluminescence measurement at any processing stage from as cut wafers to finished cells.•Megapixel images of full 125 or 156 mm wafers.
驳论文
•High resolution image enable defects detection around grain boundaries and of dislocations.
•Sensitivity of low lifetime areas detection on edge and corner wafers
•Sensitivity of Edge isolation and shunt defects monitoring on finished cells
•Flexible wafer classification by either lifetime or PL intensity
•Effective calibration methodology: Calibrated to Semilab QSS-μPCD or μPCD lifetime
•Excitation of charge carriers is carried out by high intensity illumination
•Charge carriers recombination
•If no defects prent, there is a chance of radiative recombination
•During radiative recombination, a photon is emitted
which can be detected by an IR camera
•PL intensity is inverly proportional to defect density and impurity concentration
•To get quantitative results or wafer to wafer comparison, calibration is needed as lifetime measurements
Valence band
Conduction band PL signal generation
PL signal excitation defect
Inline PL Inspection For As-Cut Wafers
延禧攻略弘昼Operation Method On-the-fly, Reflection, Semilab μPCDCalibration Wafer Size 125x125 or 156x156(on request)mm
安全画图片大全
Image Size1Megapixel
Resolution160μm/pixel
Acquisition Time< 1.5 s
鸡和马的属相合不合Detectable Defection Dislocation,Crack,High contamination density,High vacancy density
离骚的翻译
7xxx
Mono Poly Monocast
隋唐时期Sensitive to defects of material
Grain boundaries
Dislocations
Speed: 250 mm/s
Fast acquisition1: t < 1 s
High resolution1:160 μm/px 1For full 156 mm wafers.节假日工资
