高清大图专利名称：FORMATION OF MO SILICIDE 发明人：TANIGAWA AKIO,NAGASAWA EIJI,OKABAYASHI HIDEKAZU 申请号：JP2513586元宵节说说
清炖猪脚申请日：19860206
公开号：JPS62183115A
大班英语教案公开日：
学习面包
会计经理
19870811
砂连和胃胶囊专利内容由知识产权出版社提供
摘要：PURPOSE:To form MoSi2 in low resistance, by reducing an evaporation speed so that the time in which the amount of Mo necessary for forming one layer of unit lattice in cubic crystal system MoSi2 on the surface attains to the substrate becomes longer than the time necessary for pha transformation of the hexagonal crystal system MoSi2 into the cubic crystal system MoSi2 and generating silicide reaction together with the evaporation on the substrate having a silicon layer. CONSTITUTION:An evaporation speed is reduced in accordance with the temperature of the substrate 1 so that the time in which the amount of Mo necessary for forming one layer of a unit lattice in cubic crystal system MoSi2 on the surface attains to the substrate 1 becomes larger than the time necessary for pha transformation of the hexagonal crystal system MoSi2 into the cubic crystal system MoSi2, to generate silicide reaction together with the evaporation on the substrate 1 having a silicon layer. For example, ordinary acid rinsing is performed and a P-type silicon substrate 1, which is made to be a clean surface by a process of dilute hydrofluoric acid, is heated at 900 deg.C inside an electron gun evaporation device, so that 400Angstrom (corresponding to Mo film thickness) of Mo 2 is evaporated on the P-type silicon substrate 1 at an evaporation speed of 0.1A/c (corresponding to Mo film
公公爱我thickness). Thus, a MoSi2 film 3 (of about 1,000Angstrom in form thickness) in specific resistance of is formed.
申请人：NEC CORP
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