Poly resistor and poly eFu design for replacemen

更新时间:2023-06-25 22:17:51 阅读: 评论:0

喜剧电影
专利名称:Poly resistor and poly eFu design for
replacement gate technology
发明人:Harry Chuang,Kong-Beng Thei
金就砺则利
申请号:US12201602
申请日:20080829好肠胃
公开号:US07977754B2
公开日:
李峤怎么读
20110712
专利内容由知识产权出版社提供
专利附图:
摘要:A miconductor device and method for fabricating a miconductor device is disclod. The miconductor device compris a miconductor substrate; an active region of the substrate, wherein the active region includes at least one transistor; and a
雄伟拼音passive region of the substrate, wherein the passive region includes at least one resistive structure dispod on an isolation region, the at least one resistive structure in a lower plane than the at least one transistor.野生红菇
西瓜虫吃什么申请人:Harry Chuang,Kong-Beng Thei
地址:Hsin-Chu TW,Hsin-Chu TW
国籍:TW,TW
代理机构:Haynes and Boone, LLP
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