HL6339G98中文资料

更新时间:2023-06-25 19:26:31 阅读: 评论:0

HL6339G/42G
633nm Lasing Lar Diode
ADE-208-1434A (Z)
Rev.1
Apr. 2002 Description
The HL6339G/42G is 0.63 µm band AlGaInP lar diode with a multi-quantum well (MQW) structure. Lasing wavelength of this lar is nearly equal to the wavelength of He-Ne gas lar.  They are suitable as light sources for lar levelers, lar scanners and optical equipment for measurement.
Application
•Measurement
•Lar analysis systems
•Lar scanner
王八图片Features
•Optical output power: 5 mW (CW)
•Visible light output: 633 nm Typ (nearly equal to He-Ne gas lar)
•Low operating current: 55 mA Typ
•Low operating voltage: 2.3 V Typ
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•TM mode oscillation
HL6339G/42G
Rev.1, Apr. 2002, page 2 of 8
Absolute Maximum Ratings
(T C  = 25°C)
Item
Symbol Value Unit Optical output power P O 5mW LD rever voltage V R(LD)2V PD rever voltage V R(PD)30V Operating temperature Topr –10  to +40°C Storage temperature
Tstg
–40 to +85
°C
Optical and Electrical Characteristics
(T C  = 25°C)
日本肥妞Item
Symbol Min Typ Max Unit Test Condition Optical output power P O 5——mW Kink
free Threshold current Ith —4560mA Operating current I OP —5570mA P O  = 5 mW Operating voltage V OP —  2.3  2.7V P O  = 5 mW
Slope efficiency ηs 0.400.650.90mW/mA    3 (mW) / (I (4mW) – I (1mW))Lasing wavelength λp 630633635nm P O  = 5 mW Beam divergence parallel to the junction θ//6811deg.P O  = 5 mW Beam divergence
parpendicular to the junction θ⊥253035deg.P O  = 5 mW
Monitor current
I S电磁辐射
0.04
0.08
0.14
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mA
P O  = 5 mW, V R(PD) = 5 V
HL6339G/42G Typical Characteristic Curves
Rev.1, Apr. 2002, page 3 of 8
HL6339G/42G
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Rev.1, Apr. 2002, page 4 of 8
HL6339G/42G Typical Characteristic Curves (cont)
Rev.1, Apr. 2002, page 5 of 8

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