专利名称：PECVD OXIDE-NITRIDE AND OXIDE-SILICON STACKS FOR 3D MEMORY APPLICATION
发明人：RAJAGOPALAN, Nagarajan,HAN,
输出英文
女性表白日139信箱Xinhai,PARK, J, Ae,KIYOHARA,
Tsutomu,PARK, Sohyun,KIM, Bok, Hoen
申请号：US2011/053730曹冲怎么死的>微信号怎么加好友
申请日：20110928
公开号：WO2012/047697A3
公开日：
中国象棋对弈
20120628
专利内容由知识产权出版社提供
专利附图：
摘要：A layer stack of different materials is deposited on a substrate in a single
考作文plasma enhanced chemical vapor deposition processing chamber while maintaining a vacuum. A substrate is placed in the processing chamber and a first processing gas is ud to form a first layer of a first material on the substrate. A plasma purge and gas purge are performed before a cond processing gas is ud to form a cond layer of a cond material on the substrate. The plasma purge and gas purge are repeated and the additional layers of first and cond materials are deposited on the layer stack.
申请人：APPLIED MATERIALS, INC.,RAJAGOPALAN, Nagarajan,HAN, Xinhai,PARK, J, Ae,KIYOHARA, Tsutomu,PARK, Sohyun,KIM, Bok, Hoen
地址：95054 US,95054 US,94538 US,95054 US,95008 US,95051 US,95120 US
国籍：US,US,US,US,US,US,US
代理人：DERGOSITS, Michael, E.四川武警警官学院
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