Semiconductor Device with an Integrated Poly-Diode

更新时间:2023-06-24 18:46:51 阅读: 评论:0

专利名称:Semiconductor Device with an Integrated
户外手表Poly-Diode
发明人:Franz Hirler,Anton Mauder,Frank
透明血栓你在我身旁Pfirsch,Hans-Joachim Schulze
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申请号:US13849825
申请日:20130325
帝王蛾
公开号:US20130299835A1
公开日:
cad圆弧快捷键20131114
专利内容由知识产权出版社提供
专利附图:
摘要:A field effect miconductor device includes a miconductor body having a main horizontal surface and a first miconductor region of a first conductivity type, a
cond miconductor region of a cond conductivity type arranged between the first miconductor region and the main horizontal surface, an insulating layer arranged on the main horizontal surface, and a first metallization arranged on the insulating layer. The first and cond miconductor regions form a pn-junction. The miconductor body further has a deep trench extending from the main horizontal surface vertically below the pn-junction and including a conductive region insulated from the first miconductor region and the cond miconductor region, and a narrow trench including a polycrystalline miconductor region extending from the first metallization, through the insulating layer and at least to the conductive region. A vertical poly-diode structure including a horizontally extending pn-junction is arranged at least partly in the narrow trench.
申请人:Infineon Technologies Austria AG
地址:Villach AT
麻辣串的做法国籍:AT
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