DFB Lar Diode Having a Lateral Coupling for Larg

更新时间:2023-06-24 18:17:04 阅读: 评论:0

哆啦a梦的简笔画专利名称:DFB Lar Diode Having a Lateral Coupling
for Large Output Power
发明人:Johannes Bernhard Koeth,Wolfgang Zeller
关于一件事的作文
申请号:US13266831
申请日:20100505
公开号:US20120093187A1
公开日:
飞机失事原因
平底锅20120419
专利内容由知识产权出版社提供
专利附图:
摘要:The invention relates to a DFB lar diode having a lateral coupling, which compris at least one mi-conductor substrate (), at least one active layer () that is
arranged on the miconductor substrate, at least one ridge () that is arranged above the
剪贴板在哪active layer (), at least one periodic surface structure () that is arranged next to the ridge () above the active layer () and at least one wave guide layer () comprising a thickness ≧1μm that is arranged below and/or above the active layer.
抗美援朝读后感申请人:Johannes Bernhard Koeth,Wolfgang Zeller
地址:Gerbrunn DE,Wuerzburg DE调研工作
庞涓和孙膑的故事国籍:DE,DE
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