专利名称：SILICIDE FORMATION FOR eSiGe USING
SPACER OVERLAPPING eSiGe AND SILICON
CHANNEL INTERFACE AND RELATED PFET 发明人：Victor W. C. Chan,Thomas W. Dyer,Sunfei Fang,Jinghong Li,Teck J. Tang,Henry K.
Utomo,Jiang Yan
申请号：US11697806
申请日：20070409
个人月工作总结公开号：US20080246056A1
工作亮点蛙泳划手公开日：商代
苏轼字什么
卓有成效的意思
20081009
专利内容由知识产权出版社提供
专利附图：
快速写作业的方法
摘要：Methods of forming a suicide in an embedded silicon germanium (eSiGe) source/drain region using a suicide prevention spacer overlapping an interface between the eSiGe and the silicon channel, and a related PFET with an eSiGe source/drain region and a compressive stress liner in clo proximity to a silicon channel thereof, are disclod. In one embodiment, a method includes providing a gate having a nitrogen-containing spacer adjacent thereto and an epitaxially grown silicon germanium (eSiGe) region adjacent to a silicon channel of the gate; removing the nitrogen-containing spacer that does not extend over the interface between the eSiGe source/drain region and the silicon channel; forming a single silicide prevention spacer about the gate, the single silicide prevention spacer overlapping the interface; and forming the silicide in the eSiGe source/drain region using the single silicide prevention spacer to prevent the silicide from forming in at least an extension area of the silicon channel.
申请人：Victor W. C. Chan,Thomas W. Dyer,Sunfei Fang,Jinghong Li,Teck J. Tang,Henry K. Utomo,Jiang Yan
地址：Newburgh NY US,Pleasant Valley NY US,LaGrangeville NY US,Poughquag NY US,Johor Bahru MY,Newburgh NY US,Newburgh NY US
乙叶可怜国籍：US,US,US,US,MY,US,US
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