Dynamic memory array with gmented bit lines

更新时间:2023-06-23 14:46:15 阅读: 评论:0

专利名称:Dynamic memory array with gmented bit lines
拍皮球教案发明人:David J. McElroy取色器怎么用
大方的英文申请号:US07/221568
元角分厘申请日:19880719
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公开号:USRE033694E1
公开日:
吩字组词
19910917
专利内容由知识产权出版社提供
摘要:A miconductor dynamic read/write memory device contains an array of rows and columns of one-transistor memory cells with a different n amplifier for each column of cells. The n amplifier has a pair of balanced bit lines extending from its inputs, in a folded bit line configuration. The memory cells are not directly connected to the bit lines, but instead are coupled to bit line gments. The row address lects a cell to be connected to a gment, and also lects a gment to be connected to the bit line. The ratio of storage capacitance to effective bit line capacitance is incread, becau the bit line itlf is of lower capacitance to the substrate.史铁生的小说
代理人:Ronald O. Neerings,Thomas W. DeMond,Melvin Sharp
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