4 GHz to 18 GHz
Divide-by-2 Prescaler Preliminary Technical Data ADF5000
Rev. PrB
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responsibility is assumed by Analog Devices for its u, nor for any infringements of patents or other rights of third parties that may result from its u. Specifications subject to change without notice. No licen is granted by implication or otherwi under any patent or patent rights of Analog Devices. T rademarks and registered trademarks are the property of their respective owners. One Technology Way, P.O. Box 9106, N orwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 Fax: 781.461.3113 ©2010 Analog Devices, Inc. All rights rerved.
FEATURES
Divide-by-2 prescaler
High frequency operation: 4 GHz to 18 GHz
Integrated RF decoupling capacitors
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Low power consumption
Active mode: 30 mA
Power-down mode: 7 mA
Low pha noi: −147 dBc/Hz
Single dc supply: 3.3 V compatible with ADF4xxx PLLs Temperature range: −40°C to +105°C
Small package: 3 mm × 3 mm LFCSP APPLICATIONS
PLL frequency range extender
Point-to-point radios
VSAT radios
Communications test equipment
GENERAL DESCRIPTION
The ADF5000 prescaler is a low noi, low power, fixed RF divider block that can be ud to divide down frequencies as high as 18 GHz to a lower frequency suitable for input to a PLL IC, such as the ADF4156 or the ADF4106. The ADF5000 provides a divide-by-2 function. The ADF5000 operates from a 3.3 V supply and has differential 100 Ω RF outputs to allow direct interface to the differential RF inputs of PLLs such as the ADF4156 and ADF4106.
FUNCTIONAL BLOCK DIAGRAM
RFIN
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Figure 1.
ADF5000
Preliminary Technical Data
Rev. PrB | Page 2 of 12
TABLE OF CONTENTS
Features .............................................................................................. 1 Applications ....................................................................................... 1 General Description ......................................................................... 1 Functional Block Diagram .............................................................. 1 Revision History ............................................................................... 2 Specifications ..................................................................................... 3 Absolute Maximum Ratings ............................................................ 4 ESD Caution .................................................................................. 4 Pin Configuration and Function Descriptions ..............................5 Typical Performance Characteristics ..............................................6 Evaluation Board PCB ......................................................................7 PCB Material Stack-Up ................................................................7 Bill of Materials ....................................................................
倍的成语..........7 Application Circuit ............................................................................8 Outline Dimensions ..........................................................................9 Ordering Guide .. (9)
Preliminary Technical Data
ADF5000
Rev. PrB | Page 3 of 12
SPECIFICATIONS
VDD1 = VDD2 = 3.3 V ± 10%, GND = 0 V; dBm referred to 50 Ω; T A = T MIN to T MAX , unless otherwi noted. Operating temperature range is −40°C to +105°C. Table 1.
Parameter Min Typ Max Unit Test Conditions/Comments RF CHARACTERISTICS Input Frequency 4 18 GHz RF Input Sensitivity −10 +10 dBm 4 GHz to 18 GHz Output Power −10 −5 dBm Single-ended output connected into 50 Ω load −7 −2 dBm Differential outputs connected into 100 Ω
differential load Output Voltage Swing 200 330 mV p-p Peak-to-peak voltage swing on each single-ended
output, connected into 50 Ω load
400 660 mV p-p Peak-to-peak voltage swing on differential
output, connected into 100 Ω differential load
1000 mV p-p Peak-to-peak voltage swing on each single-ended
output, no load condition
Pha Noi −147 dBc/Hz Input frequency (f IN ) = 12 GHz, offt = 100 kHz Rever Leakage −60 dBm RF input power (P IN ) = 0 dBm, RF OUT = 4 GHz Second Harmonic Content −38 dBc Third Harmonic Content −12 dBc Fourth Harmonic Content −20 dBc Fifth Harmonic Content −19 dBc CE INPUT Input High Voltage, V IH 2.2 V Input Low Voltage, V IL 0.3 V POWER SUPP L
IES Voltage Supply 3.0 3.3 3.6 V I DD (I DD1 + I DD2) Active 30 60 mA CE is high Power-Down 7 25 mA CE is low
ADF5000
Preliminary Technical Data
Rev. PrB | Page 4 of 12
ABSOLUTE MAXIMUM RATINGS
Table 2.
Parameter Rating VDDx to GND −0.3 V to +3.9 V RFIN 10 dBm Operating Temperature Range
Industrial (B Version)
−40°C to +105°C Storage Temperature Range −65°C to +150°C Maximum Junction Temperature 150°C LFCSP θJA Thermal Impedance 27.3°C/W Peak Temperature
260°C Time at Peak Temperature 40 c肩章
Stress above tho listed under Absolute Maximum Ratings may cau permanent damage to the device. This is a stress rating only; functional operation of the device at the or any other conditions above tho indicated in the operational
ction of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. This device is a high performance RF integrated circuit with
an ESD rating of 2 kV , human body model (HBM) and is ESD nsitive. Proper precautions should be taken for handling and asmbly.
ESD CAUTION
Preliminary Technical Data
ADF5000
Rev. PrB | Page 5 of 12
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
NOTES
1. NC = NO CONNECT.
2. THE EXPOSED PADDLE MUST BE CONNECTED TO GND.
1GND 2RFIN 3GND 4
GND 11RFOUT 12GND 10RFOUT 9GND
5
G N D 6
N C 7
C E 8
G N D 15V D D 1
16G N D
14V D D 2
13G N D
08753-002
早间励志语录Figure 2. Pin Configuration
ADF5000
Preliminary Technical Data
Rev. PrB | Page 6 of 12
TYPICAL PERFORMANCE CHARACTERISTICS
–60
–50
–40
–30
–20
–10
05
1015252030
INPUT FREQUENCY (GHz)
M I N I M U M I N P U T P O W E R (d B m )
08753-00
3
Figure 3. RF Input Sensitivity 40353025201510502.5
2.7 2.9
3.1
3.3
3.5
3.7
3.9
I D D x (m A )
VDDx (V)
08753-004
Figure 4. I DD1 and I DD2 vs. VDDx, f IN = 10 GHz, P IN = 0 dBm 0–2–4–6–8–10–14–18–12–16–20
2.5
2.9
3.3 3.7
O U T P U T P O W E R (d B m )
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VDDx (V)
3.9
2.7
3.1
3.5
08753-00
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Figure 5. RF Output Power (Single-Ended) vs. VDDx, f IN = 10 GHz, P IN = 0 dBm
–5
–10
–15–25–35–45
–50
H A R M O N I C P O W E R (d B m )
VDDx (V)
–20–30–4008753-006
Figure 6. RF Output Harmonic Content vs. VDDx
–1–2
–3–4–5–6–7–8
–9
–10
O U T P U T P O W E R (d B m )
INPUT FREQUENCY (GHz)
08753-007
Figure 7. RF Output Power vs. RF Input Frequency, f IN = 10 GHz, V DD = 3.3 V
