专利名称：Bipolar transistor with polysilicon stringer ba contact
发明人：Vora, Madhukar B.
申请号：EP87401516.7
农村养殖啥赚钱申请日：19870701
重庆高校排名寒鸦是什么意思公开号：EP0251927B1
公开日：
ps怎么调亮度19940504
专利内容由知识产权出版社提供
摘要：There is disclod herein a ba and emitter contact structure for a bipolar transistor which is comprid of polysilicon stripe over an isolation island which stripe extends to a position external to the position of the isolation island and assumes the shape of an emitter contact pad. The emitter contact stripe has a layer of lf aligned silicide formed thereover to lower its resistance, and this silicide is doped with both N and P type impurities one of which is lected to have a higher rate of diffusion than the other. A layer of lf aligned insulating material is formed over the silicide and polysilicon of the emitter contact stripe. There are anisotropically etched insulating spacers formed on the sides of the emitter contact stripe, and there are silicide ba contact stringers formed beside the spacers by anisotropic etching of a layer of doped silicide. A heat drive in step in the process ud to make the structure, also disclod herein, caus the impurities from the two silicide layers to diffu into the emitter contact polysilicon and into the epitaxially grown silicon in the isolation island. An emitter and a ba are and the the attendant ba-emitter and ba-collector junctions are formed becau the faster diffusing impurity overtakes the slower diffusing impurity and pass it to thereby form the ba region. The impurities from the ba contact stringers also diffu into thethus
epitaxially grown silicon and their lateral diffusion caus them to link up with the ba impurities whi
询证函模板ch have diffud into the epitaxially grown silicon from the silicide over the emitter contact polysilicon.
申请人：FAIRCHILD SEMICONDUCTOR
地址：US
拔毛济世国籍：US
汽车底盘维修代理机构：Sparing Röhl Henler Patentanwälte
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