专利名称：Burst refresh mode for DRAMs 发明人：Parris, Michael C.
沙子>日月食申请号：EP94114186.3
申请日：19940909
公开号：EP0647945B1
公开日：
牙菌斑怎么治疗建筑物的英语20000419
专利内容由知识产权出版社提供
摘要：Burst refresh mode circuitry is provided for a memory (100) having cells (112) in rows and columns, n amplifiers (110) and Latch N/Latch P driver circuitry (124), a RAS buffer (102), refresh counters (106), address buffers (104), row decoders (108), precharge circuitry (120) producing shorting clocks (128), and a refresh detector circuit coupled to the Latch P circuitry to provide a restore finished (RF) signal indicative that a refresh cycle is substantially completed. Burst refresh mode entry circuitry (140) detects proper conditions for entering burst refresh mode. An auto-refresh burst refresh mode circuit (136) caus the RAS buffer (102) to generate a new internal RAS signal. Burst refresh mode logic (134) has counters to count the number of rows that have been refreshed. The system lf-times the refreshing by responding to the restore finished signal. A delay circuit (130) interpos a short delay for the precharge before another row is automatically refreshed in the burst refresh mode. Battery back-up mode circuitry (132) is partially disabled.
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小芳的故事普通话发音训练申请人：MOSEL VITELIC INC
印小天老婆地址：TW
国籍：TW
代理机构：Quinterno, Giuppe 更多信息请下载全文后查看
