专利名称：High brightness—multiple beamlets source
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for patterned X-ray production
圣安东尼奥马刺队发明人：Ka-Ngo Leung,Qing Ji,William A.
Barletta,Ximan Jiang,Lili Ji课程表英语
申请号：US11757137
申请日：20070601
公开号：US07609815B2
solitude公开日：
亲和力英文
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专利附图：
摘要：Techniques for controllably directing beamlets to a target substrate are朱子家训翻译>广外培训
disclod. The beamlets may be either positive ions or electrons. It has been shown that
beamlets may be produced with a diameter of 1 μm, with inter-aperture spacings of 12μm. An array of such beamlets, may be ud for maskless lithography. By step-wi movement of the beamlets relative to the target substrate, individual devices may be directly e-beam written. Ion beams may be directly written as well. Due to the high brightness of the beamlets from extraction from a multicusp source, exposure times for lithographic exposure are thought to be minimized. Alternatively, the beamlets may be electrons striking a high Z material for X-ray production, thereafter collimated to provide patterned X-ray exposures such as tho ud in CAT scans. Such a device may be ud for remote detection of explosives.
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申请人：Ka-Ngo Leung,Qing Ji,William A. Barletta,Ximan Jiang,Lili Ji
地址：Hercules CA US,Albany CA US,Oakland CA US,El Cerrito CA US,Albany CA US 国籍：US,US,US,US,US
代理机构：Lawrence Berkeley National Laboratory
代理人：Lawrence Edelman
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