In-situ pad conditioning process for CMP

更新时间:2023-06-18 13:50:11 阅读: 评论:0

专利名称:In-situ pad conditioning process for CMP 发明人:Timothy Scott Bullard,Richard Johnjhg
Lebel,Rock Nadeau,Paul Henry Smith, Jr.申请号:US09/169382
lineh申请日:19981009
ione
公开号:US06022266A
展望未来英语
approval公开日:
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职称英语考试查询20000208
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专利内容由知识产权出版社提供自我介绍
摘要:An improved method of in-situ conditioning of a polishing pad for u with a stationary pad conditioner during chemical mechanical polishing is described. A polishing table having a polishing pad on its surface is rotated in a first direction during polishing of a miconductor wafer. A polishing pad conditioner is adjustably attached to the rotating polishing table such that the conditioner is stationary in relation to the rotating polishing table. The conditioner has a roughened surface which is in contact with the polishing pad providing in- situ conditioning during polishing of a miconductor wafer. After polishing of the miconductor wafer, the polishing table is rotated in a cond direction while the conditioner is still in contact with polishing pad. Rotating the polishing pad in a cond direction dislodges the polishing debris clogging the roughened surface of the conditioner and redistributes CMP slurry. The roughened surface of the pad conditioner is refreshed allowing more effective conditioning of the polishing pad. Pad life is prolonged, polishing is stabilized, and the polish cycle time is reduced.
java技能培训申请人:INTERNATIONAL BUSINESS MACHINES CORPORATION
代理机构:DeLio & Peterson LLC
代理人:Shirley S. MA,Howard J. Walter, Jr.更多信息请下载全文后查看

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