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专利名称：Tailoring channel strain profile by recesd
kate winsletmaterial composition control
发明人：Elisabeth Marley Koontz
申请号：US11021649雅思视频教程
申请日：20041222大学新生 电影
公开号：US07279406B2
公开日：
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专利附图：
摘要：The prent invention facilitates miconductor fabrication by providing
methods of fabrication that tailor applied strain profiles to channel regions of transistor devices. A strain profile is lected for the channel regions (). Recesd regions are
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formed () in active regions of a miconductor device after formation of gate structures according to the lected strain profile. A recess etch () is employed to remove a surface portion of the active regions thereby forming the recess regions. Subquently, a composition controlled recess structure is formed () within the recesd regions according to the lected strain profile. The recess structure is comprid of a strain inducing material, wherein one or more of its components are controlled and/or adjusted during formation () to tailor the applied vertical channel strain profile.唐顿庄园 第四季
申请人：Elisabeth Marley Koontz
地址：Dallas TX US
国籍：US
代理人：Peter K. McLarty,W. James Brady, III,Frederick J. Telecky, Jr.
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