The graphical symbol as shown below is ud in this edition of IEC 60747-9.
1.N-channel IGBT
IGBT that has one or more N-type conduction channels See IEV 521-05-06.
P-channel IGBT
2. IGBT that has one or more P-type conduction channels
See IEV 521-04-05.
collector-emitter voltage with gate-emitter short-circuited
3.VCES
collector-emitter voltage at which the collector current has a specified low (absolute) value
云的英语with gate-emitter short-circuited
gate-emitter threshold voltage
3.1 VGES
Gate-emitter voltages with collector emitter short circuit
Maximum positive and negative values.
4.VGE(th)
gate-emitter voltage at which the collector current has a specified low (absolute) value
5.safe operating area SOA
collector current versus collector emitter voltage where the IGBT is able to turn-on and turn-
off without failure
6. turn-on time ton
sum of the turn-on delay time and the ri time
7. turn-off time toff
sum of the turn-off delay time and the fall time
Figure 1 – Circuit for measuring the collector-emitter voltages VCES, VCERhourglass, VCEX
VCC我的职业理想>形容词的比较级和最高级 and VGG are the voltage supply. R1 is a circuit protection resistor.
The specified conditions between gate and emitter shall be applied. The collector-emitter
voltage is t to the specified value.
8.Specified conditions
.Collector-emitter voltage VCE
– Ambient or ca or virtual junction temperature Ta or Tc or Tvj
– V中级口译教程CEX: gate-emitter voltage –VGG
– VCER: resistor connected between gate and emitter
– VCES: short circuit between gate and emitter
at last
9.Circuit for measuring the variation with temperature of the collector- emitter voltage VCE at a low measuring current IC1 and for heating up the IGBTby a high current IC2
A current source supplies a low continuous direct collector current IC1 which is just sufficient to rai the collector-emitter voltage V深圳英孚CE above the saturation value. An electronic power switch S supplies on top of IC1 a high collector current IC2. After switching IC2 off, the IGBT returns to the
IC1 conduction. R2 is a current measuring resistor. In its place, any other appropriate current probe may be ud.
a) Determination of the temperature coefficient α VCE of the collector-emitter voltage VCE at
the low measuring current IC1 (e Figure 28).
The IGBT to be measured is heated subquently to the temperatures T1 and T2 by immersing it in a heated chamber or inert fluid. Thermal equilibrium must be achieved before measurements are taken. At temperature T1 the collector-emitter voltage at the measuring current IC1ax is VCE1. At a higher temperature T2 it is VCE2. Then the temperature coefficient α VCE is:
Figure 28 – Typical variation of the collector-emitter voltage VCE at a low measuring current IC1 with the ca temperature Tc (when heated from outside, i.e. Tc= Tvj)
b) Measurement of the respon to a step change in the internal power dissipation
The IGBT to be measured is fixed on a suitable heatsink. The ca temperature Tc1 is easured. At that temperature, the measuring current produces the collector-emittervoltag
e VCE3. The power switch S is switched on. The high collector current IC2flows.When thermal equilibrium is established, Tc= const. = Tc2and VCE= VCE4nawoare measured.
Now IC2is switched off. Immediately after switch-off, the collector-emitter voltage at IC1is
measured to be VCE5. Then at that instant
If the transient thermal impedance Zth(j-c)is to be determined, the variations with time of
VCEat IC1and of Tcduring the cooling period after switching off IC2are plotted, and the
Zth(j-c)values are calculated point by point using the above equations.
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