专利名称：Stacked gate structures
发明人：Chen Zhang,Dechao Guo,Junli Wang,Ruilong
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Park,Ruqiang Bao,Sung Dae Suk,Lan Yu,Heng
Wu
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新航道申请号：US16946856
申请日：20200709
公开号：US11282838B2
公开日：
20220322
专利内容由知识产权出版社提供online libraries
专利附图：
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摘要：An embodiment of the invention may include a miconductor structure and
披沙简金method of manufacturing. The miconductor structure may include a top channel and a bottom channel, wherein the top channel includes a plurality of vertically oriented channels. The bottom channel includes a plurality of horizontally oriented channels. The miconductor structure may include a gate surrounding the top channel and the bottom channel. The miconductor structure may include spacers located on each side of the gate. A first spacer includes a dielectric material located between the plurality of vertically oriented channels. A cond spacer includes a dielectric material located between the plurality of horizontally oriented channels. This may enable spacer formation between the vertical spacers.
申请人：INTERNATIONAL BUSINESS MACHINES CORPORATION
地址：Armonk NY US
国籍：US
代理人：L. Jeffrey Kelly
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