Method for lective chemical vapor deposition of

更新时间:2023-06-01 09:22:41 阅读: 评论:0

专利名称:Method for lective chemical vaporsome time
四六级改革deposition of nanotubes
发明人:Ruth Yu-Ai Zhang,Raymond K. Tsui,John
西藏英语Trek, Jr.,Adam M. Rawlett
申请号:US11419058
申请日:20060518
公开号:US07361579B2
淘换公开日:
20080422
专利内容由知识产权出版社提供
会计电算化软件
专利附图:
itty bitty摘要:A method of fabricating a nanotube structure which includes providing a
substrate, providing a mask region positioned on the substrate, patterning and etching
through the mask region to form at least one trench, depositing a conductive material layer within the at least one trench, depositing a solvent bad nanoparticle catalyst onto the conductive material layer within the at least one trench, removing the mask region and subquent layers grown thereon using a lift-off process, and forming at least one nanotube electrically connected to the conductive material layer using chemical vapor deposition with a methane precursor.初中补习网站
申请人:Ruth Yu-Ai Zhang,Raymond K. Tsui,John Trek, Jr.,Adam M. Rawlett
地址:Gilbert AZ US,Tempe AZ US,Phoenix AZ US,Chandler AZ US
拿破仑英语名言国籍:US,US,US,US
太平洋英语
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