CMOS工艺详解

更新时间:2023-05-30 10:41:13 阅读: 评论:0

名著
1.1 Metal 1
Step Thickness/Material Conditions Method/Tool Remark
1.1.1 W deposition 500 nm Fill contact + interconnect 1.1.2 TiN deposition 20 nm Anti-reflective coating DUV
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Step Thickness/Material Conditions Method/Tool Remark
1.1.3 Surface oxidation
1.1.4 Photo metal 1 DUV
Ti/TiN layer
1.1.5 Etch metal 1 Including 1.1.6 Strip metal 1
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1.2 Parametric test M1innocentive
Step Thickness/Material Conditions Method/Tool Remark 1.2.1 Alloy PCM M1
1.2.2 Keithley test PCM M1
1.3 M1 planarization
Step Thickness/Material Conditions Method/Tool Remark 1.3.1 SACVD / TEOS deposition 0.45 + 2.0 µm
Step Thickness/Material Conditions Method/Tool Remark
1.3.2 CMP 0.95 µm oxide on metal after CMP 1.3.3 Scrub
1.3.4 Oxide etch
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1.4 Via 1you were my everything
Step Thickness/Material Conditions Method/Tool Remark
1.4.1 Photo via 1 DUV
1.4.2 Etch via 1
1.4.3 Strip via 1
flora1.4.4 TiN deposition 60 nm Including 6 nm sputter etch 1.4.5 W deposition 500 nm
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