专利名称：A method for improving the etching
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resistance of the resist underlayer film by
pretreatment using hydrogen gas.
发明人：石橋 謙，中島 誠，谷口 博昭，遠藤 勇樹，志垣 修平申请号：JP2018247753
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申请日：20181228
公开号：JP2022037944A
在线词典查询公开日：zaha hadid
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20220310
专利内容由知识产权出版社提供
ais是什么意思摘要：PROBLEM TO BE SOLVED: To provide a new method for improving resistance to halogen-containing gas etching. A method for improving the halogen-containing gas etching resistance of a silicon-containing film, which compris a step of etching or ashing the silicon-containing film with a hydrogen gas-containing gas before etching the halogen-containing gas. [Selection diagram] None人教版四年级下册
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申请人：日産化学株式会社
地址：東京都中央区日本橋二丁目5番1号
国籍：JP
代理人：特許業務法人はなぶさ特許商標事務所
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