P-Channel 30-V (D-S) MOSFET
FEATURES
•Halogen-free According to IEC 61249-2-21
Definition
•TrenchFET ® Power MOSFET •100 % R g Tested
•Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
•Load Switch
•Notebook Adaptor Switch •DC/DC Converter
Notes:
a.Bad on T C = 25 °C.
b.Surface Mounted on 1" x 1" FR4 board.
c.t = 5 s.
marine survey
d.Maximum under Steady State conditions is 166 °C/W.
e.Package Limited.PRODUCT SUMMARY
V DS (V)R DS(on) (Ω)
I D (A)
a, e
Q g (Typ.)- 30
0.045 at V GS = - 10 V - 5.97 nC
mother的含义
0.075 at V GS = - 4.5 V
- 4.6
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwi noted
Parameter Symbol Limit Unit
Drain-Source Voltage V DS - 30V
Gate-Source Voltage
V GS
± 20Continuous Drain Current (T J = 150 °C)
T C = 25 °C
I D - 5.9A T C = 70 °C - 4.7T A = 25 °C - 4.2b, c T A = 70 °C
- 3.3b, c Puld Drain Current
I DM - 25Continous Source-Drain Diode Currentunder the counter
T C = 25 °C I S - 2.1T A = 25 °C - 1b, c Maximum Power Dissipation
T C = 25 °C
P D 2.5W T C = 70 °C 1.6T A = 25 °C 1.25b, c T A = 70 °C
0.8b, c Operating Junction and Storage Temperature Range
T J , T stg - 55 to 150宫保鸡丁 英文
°C THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient b, d t ≤ 5 s R thJA 75100°C/W
Maximum Junction-to-Foot (Drain)
教师节开场白Steady State
R thJF
40
50
Notes:
a. Pul test; pul width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stress beyond tho listed under “Absolute Maximum Ratings” may cau permanent damage to the device. The are stress ratings only, and functional operation of the device at the or any other conditions beyond tho indicated in the operational ctions of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
SPECIFICATIONS T J = 25 °C, unless otherwi noted
Parameter Symbol Test Conditions Min. Typ.Max.Unit
Static
Drain-Source Breakdown Voltage V DS V GS = 0 V , I D = - 250 µA
- 30
V V DS Temperature Coefficient ΔV DS /T J I D = - 250 µA
- 19mV/°C V GS(th) T emperature Coefficient ΔV GS(th)/T J 4.4
Gate-Source Threshold Voltage V GS(th)V DS = V GS , I D = - 250 µA - 1.2- 2.5V Gate-Source Leakage
I GSS V DS = 0 V , V GS = ± 20 V ± 100nA Zero Gate Voltage Drain Current I DSS V DS = - 30 V , V GS = 0 V - 1µA V DS = - 30 V, V GS = 0 V, T J = 55 °C
- 5
On-State Drain Current a
I D(on) V DS ≤ - 5 V , V GS = - 10 V - 25
A Drain-Source On-State Resistance a R DS(on)V GS = - 10 V , I D = - 4.2 A 0.0370.045ΩV GS = - 4.5 V , I D = - 3.2 A 0.0620.075
Forward T ransconductance a g fs
vo
V DS = - 15 V, I D = - 4.2 A
10
S
Dynamic b
Input Capacitance C iss V DS = - 15 V , V GS = 0 V , f = 1 MHz
590pF
Output Capacitance
C oss 115Rever Transfer Capacitance C rss 93Total Gate Charge Q g V DS = - 15 V, V GS = - 10 V , I
D = - 4.2 A 13.621nC V DS = - 15 V , V GS = - 4.5 V , I D = - 4.2 A 711
Gate-Source Charge Q gs 2.3Gate-Drain Charge Q gd 3.2Gate Resistance R g f = 1 MHz
the departed1
惊喜的英语
510Ω
Turn-On Delay Time t d(on) V DD = - 15 V , R L = 4.5 Ω
I D ≅ - 3.3 A, V GEN = - 4.5 V , R g = 1 Ω
3045ns Ri Time
t r 2538Turn-Off Delay Time t d(off) 1624Fall Time
t f 816Turn-On Delay Time t d(on) V DD = - 15 V , R L = 4.5 Ω
I D ≅ - 3.3 A, V GEN = - 10 V , R g = 1 Ω816Ri Time
t r 1020Turn-Off Delay Time t d(off) 1827Fall Time
t f
8
16
Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I S T C = 25 °C
- 4.2A Pul Diode Forward Current I SM - 25Body Diode Voltage
V SD I S = - 3.3 A, V GS = 0 V
- 0.8- 1.2V Body Diode Rever Recovery Time t rr I F = - 3.3 A, dI/dt = 100 A/µs, T J = 25 °C
1726ns Body Diode Rever Recovery Charge Q rr 918
nC Rever Recovery Fall Time t a 10ns
Rever Recovery Ri Time
t b
7
On-Resistance vs. Drain Current
Gate Charge
Capacitance
On-Resistance vs. Junction Temperature
Safe Operating Area, Junction-to-Ambient
TYPICAL CHARACTERISTICS 25°C, unless otherwi noted
北京环球雅思* The power dissipation P D is bad on T J(max) = 150 °C, using junction-to-ca thermal resistance, and is more uful in ttling the upper dissipation limit for cas where additional heatsinking is ud. It is ud to determine the current rating, when this rating falls below the package limit.
Power, Junction-to-Foot
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Power, Junction-to-Ambient
