N-Channel 75-V (D-S) MOSFET
FEATURES
•Halogen-free According to IEC 61249-2-21
Available
•TrenchFET ® Power MOSFET理智与情感英文
•Low Thermal Resistance PowerPAK ®
Package with Small Size and Low 1.07 mm Profile
chine festivalAPPLICATIONS
•
PRODUCT SUMMARY
V DS (V)R DS(on) (Ω)I D (A)Q g (Typ.)75
0.037 at V GS = 10 V 16e 8 nC
0.046 at V GS = 4.5 V
16e
Notes:ensure
a.Surface Mounted on 1" x 1" FR4 board.
b.t = 10 s.
9511
c.See Solder Profile (/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is expod copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the expod copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection.
d.Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
e.Package limited.ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwi noted
arameter Symbol Limit Unit
Drain-Source Voltage V DS 75V
Gate-Source Voltage
V GS
± 20Continuous Drain Current (T J = 150 °C)
T C = 25 °C
I D 16e A T C = 70 °C 16e T A = 25 °C 7.2a, b T A = 70 °C
5.7a, b Puld Drain Current
I DM 25Continuous Source-Drain Diode Current T C = 25 °C I S 16e T A = 25 °C 3.2a, b Avalanche Current
L = 0.1 mH I AS 15Single-Pul Avalanche Energy
E AS 11mJ Maximum Power Dissipation
T C = 25 °C
P D 52W T C = 70 °C 33T A = 25 °C 3.8a, b T A = 70 °C
2.4a, b Operating Junction and Storage T emperature Range T J , T stg - 55 to 150
°C Soldering Recommendations (Peak Temperature)c, d
260
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. Maximum under Steady State conditions is 81 °C/W.
THERMAL RESISTANCE RATINGS
arameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient a, b t ≤ 10 s R thJA 2633°C/W
Maximum Junction-to-Ca (Drain)
Steady State
R thJC
1.9
2.4
SPECIFICATIONS T J = 25 °C, unless otherwi noted
arameter Symbol Test Conditions Min.Typ.Max.Unit
Static
Drain-Source Breakdown Voltage V DS V GS = 0 V , I D = 250 µA
sm是什么意思 75
V V DS Temperature Coefficient ΔV DS /T J I D = 250 µA 65mV/°C V GS(th) Temperature Coefficient ΔV GS(th)/T J - 6.4Gate-Source Threshold Voltage V GS(th) V DS = V GS , I D = 250 µA 1.0 2.0 3.0
V V DS = V GS , I D = 5 mA 2.3
Gate-Source Leakage
I GSS V DS = 0 V, V GS = ± 20 V ± 100nA Zero Gate Voltage Drain Current I DSS V DS = 75 V , V GS = 0 V 1µA V DS = 75 V , V GS = 0 V , T J = 55 °C
10On-State Drain Current a
I D(on) V DS ≥ 5 V , V GS = 10 V 25
A Drain-Source On-State Resistance a R DS(on) V GS = 10 V , I D = 7.2 A 0.0310.037ΩV GS = 4.5 V, I D = 6.4 A 0.0380.046
Forward T ransconductance a g fs
V DS = 15 V , I D = 7.2 A
23
S
Dynamic b
上海全日制自考大学Input Capacitance C iss V DS = 35 V , V GS = 0 V , f = 1 MHz
840pF
Output Capacitance
C oss 110Rever Transfer Capacitance C rss 50Total Gate Charge Q g V DS = 38 V , V GS = 10 V , I
D = 7.2 A 1624nC V DS = 38 V , V GS = 4.5 V, I D = 7.2 A 812
Gate-Source Charge Q gs 2.8Gate-Drain Charge Q gd 3.6Gate Resistance R g f = 1 MHz
1Ω
Turn-On Delay Time t d(on) V DD = 38 V , R L = 6.7 Ω I D ≅ 5.7 A, V GEN = 4.5 V , R g = 1 Ω
2030ns Ri Time
t r 130200Turn-Off Delay Time t d(off) 2030Fall Time
t f 5075Turn-On Delay Time t d(on) V DD = 38 V , R L = 6.7 Ω
I D ≅ 5.7 A, V GEN = 10 V , R g = 1 Ω1525Ri Time
t r 2030Turn-Off Delay Time t d(off) 3540Fall Time
t f
10
15
Notes:
a. Pul test; pul width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stress beyond tho listed under “Absolute Maximum Ratings” may cau permanent damage to the device. The are stress ratings only, and functional operation of the device at the or any other conditions beyond tho indicated in the operational ctions of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
SPECIFICATIONS T J = 25 °C, unless otherwi noted
arameter Symbol Test Conditions Min.Typ.Max.Unit
Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I S T C = 25 °C
challenge是什么意思16A Pul Diode Forward Current a I SM 25Body Diode Voltage
V SD I S = 3.2 A
0.8 1.2V Body Diode Rever Recovery Time t rr I F = 5.7 A, dI/dt = 100 A/µs, T J = 25 °C
2015河南高考3050ns Body Diode Rever Recovery Charge Q rr 4065
nC Rever Recovery Fall Time t a 23ns
Rever Recovery Ri Time
t b
7
On-Resistance vs. Drain Current and Gate Voltage
Gate Charge
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
TYPICAL CHARACTERISTICS 25
Source-Drain Diode Forward Voltage
Threshold Voltage
On-Resistance vs. Gate-to-Source Voltage
Single Pul Power, Junction-to-Ambient
TYPICAL CHARACTERISTICS 25°C, unless otherwi noted
* The power dissipation P D is bad on T J(max) = 150 °C, using junction-to-ca thermal resistance, and is more uful in ttling the upper dissipation limit for cas where additional heatsinking is ud. It is ud to determine the current rating, when this rating falls below the package limit.
Power, Junction-to-Cascute
Single Pul Avalanche Capability解决方案英文
