forum专利名称：COPPER ETCHING PROCESS USING HALIDE SUBSTANCE
发明人：MONTE EI DAGURASU
申请号：JP40445790
申请日：19901220favorite怎么读
公开号：JPH04159718A
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专利内容由知识产权出版社提供
摘要：PURPOSE: To enable effective copper film etching processing in the manufacturing process of an integrated circuit by introducing a halogen into the copper layer of a aled chamber for forming a copper halogen reaction product after the halogen has been irradiated with high-intensity light. CONSTITUTION: An integrated circuit wafer has a single-crystal silicon substrate 9, a copper metal layer 10 and a patterned mask 11 on a substrate holder 8 in a aled chamber 6. Then, an injection part 12 lets a reactor R flow into the chamber 6 and enables contact with the wafers 9, 10 and 11, but the reactor R is a halogen radical chlorine, fluorine, bromine or iodine, and the halogen radical is generated by photochemical dissociation, microwave phosphorescence dissociation or plasma discharge dissociation. Therefore, the halogen radical R is optically activated by a high-intensity light 5 and contacted with the copper layer 10 and the mask layer 11. Thus, more effective etching processing for etching the copper layer in integrated circuit production is enabled.mfa
申请人：TEXAS INSTR INC
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