P-CHANNEL ENHANCEMENT MODE POWER MOSFET
▼ Simple Drive Requirement BV DSS -30V ▼ Low On-resistance
R DS(ON)
20m Ω▼ Fast Switching Characteristic I D
-9A
▼ RoHS Compliant
Description
Absolute Maximum Ratings
Symbol Units V DS V V GS
V I D @T A =25℃A I D @T A =70℃A I DM
A P D @T A =25℃W W/℃T STG ℃T J
℃
Symbol Value Unit Rthj-a
合同翻译Maximum Thermal Resistance, Junction-ambient
3
50
℃/W
Data and specifications subject to change without notice Halogen-Free Product
富力桃园幼儿园Thermal Data
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Parameter
泰国宣布进入紧急状态Total Power Dissipation 2.5-55 to 150Operating Junction Temperature Range
-55 to 150
Storage Temperature Range
Continuous Drain Current 3
-7.3Puld Drain Current 1-500.02Linear Derating Factor Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 31
200811216
AP4435GM-HF
Rating - 30+ 20-9Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,
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ruggedized device design, low on-resistance and cost-effectiveness.The SO-8 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
S S
S G
D
D D
D
SO-8
Electrical Characteristics@T j=25o C(unless otherwi specified) Symbol Parameter Test Conditions Min.Typ.
Max.Units
BV DSS Drain-Source Breakdown Voltage V GS=0V, I D=-250uA-30--V R DS(ON)Static Drain-Source On-Resistance2V GS=-10V, I D=-7A--20mΩ
V GS=-4.5V, I D=-5A--32mΩV GS(th)Gate Threshold Voltage V DS=V GS, I D=-250uA-1--3V g fs Forward Transconductance V DS=-10V, I D=-7A-16-S I DSS Drain-Source Leakage Current V
DS
=-30V, V GS=0V---1uA Drain-Source Leakage Current (T j=70o C)V DS=-24V, V GS=0V---25uA
I GSS Gate-Source Leakage V
GS
=+20V--+100nA Q g Total Gate Charge2I D=-7A-1829nC Q gs Gate-Source Charge V DS=-24V-3-nC Q gd Gate-Drain ("Miller") Charge V GS=-4.5V-10-nC t d(on)Turn-on Delay Time2V DS=-15V-8-ns t r Ri Time I D=-1A- 6.6-ns t d(off)Turn-off Delay Time R G=3.3Ω,V GS=-10V-44-ns t f Fall Time R D=15Ω-34-ns C iss Input Capacitance V GS=0V-11751690pF C oss Output Capacitance V DS=-25V-195-pF C rss Rever Transfer Capacitance f=1.0MHz-190-pF Source-Drain Diode
Symbol Parameter Test Conditions Min.Typ.Max.Units V SD Forward On Voltage2I S=-2.1A, V GS=0V---1.2V t rr Rever Recovery Time2I S=-7A, V GS=0V,-28-ns Q rr Rever Recovery Charge dI/dt=100A/µs-18-nC Notes:
1.Pul width limited by Max. junction temperature.
2.Pul test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10c ; 125 ℃/W when mounted on Min. copper pad.
2 AP4435GM-HF
AP4435GM-HF
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s. Rever Diode
Junction Temperature
AP4435GM-HF
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Fig 7. Gate Charge Characteristics
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Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
tracertFig 11. Transfer Characteristics Fig 12. Gate Charge Circuit
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